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Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing

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Abstract

The effects of post-metallization annealing (PMA) have been investigated for thermally-grown SiO2 on 4H-SiC metal-oxide-semiconductor (MOS) with a molybdenum (Mo) gate electrode. Mo is a great metal gate material for Silicon carbide (SiC) due to its high thermal budget and low thermal expansion coefficient, which allows high-temperature processing after the gate electrode formation. In this study, PMA process was carried out after Mo gate formation on thermally-grown SiO2/4H-SiC in the temperature range from 600 to 1000 °C in N2 or a forming gas ambient. The fabricated Mo/SiO2/4H-SiC MOS device annealed at 800 °C exhibited excellent interface characteristics with negligible hysteresis in comparison with as-grown or post-oxidation annealed samples.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, Korea

    Jae-Gil Lee, Dong-Hwan Kim, Su-Keun Eom, Seung-Hyun Roh & Kwang-Seok Seo

  2. School of Electronic and Electrical Engineering, Hongik University, Seoul, 04066, Korea

    Hyun-Seop Kim, Hyungtak Kim & Ho-Young Cha

  3. Materials Science and Engineering, University of Texas at Dallas, Richardson, 75080, USA

    Young-Chul Byun

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  1. Jae-Gil Lee
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  2. Dong-Hwan Kim
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  3. Su-Keun Eom
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  4. Seung-Hyun Roh
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  6. Hyun-Seop Kim
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  7. Hyungtak Kim
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  9. Young-Chul Byun
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Correspondence to Jae-Gil Lee.

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Lee, JG., Kim, DH., Eom, SK. et al. Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing. Journal of the Korean Physical Society 72, 166–170 (2018). https://doi.org/10.3938/jkps.72.166

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  • DOI: https://doi.org/10.3938/jkps.72.166

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