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A transistor based on 2D material and silicon junction

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Abstract

A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many recent studies on graphene field-effect transistor (FET), this device is a new type of bipolar junction transistor (BJT). The transistor fully utilizes the Fermi level tunability of graphene under bias to increase the minority-carrier injection efficiency of the base-emitter junction in the BJT. Single-layer graphene was used to form the emitter and the collector, and a p-type silicon was used as the base. The output of this transistor was compared with a metal-silicon junction transistor (i.e. surface-barrier transistor) to understand the difference between a graphene-silicon junction and metal-silicon Schottky junction. A significantly higher current gain was observed in the graphene-silicon junction transistor as the base current was increased. The graphene-semiconductor heterojunction transistor offers several unique advantages, such as an extremely thin device profile, a low-temperature (< 110 °C) fabrication process, low cost (no furnace process), and high-temperature tolerance due to graphene’s stability. A transistor current gain (β) of 33.7 and a common-emitter amplifier voltage gain of 24.9 were achieved.

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Authors and Affiliations

  1. Department of Electronic Engineering, Kyung Hee University, Yongin, 17104, Korea

    Sanghoek Kim & Seunghyun Lee

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  1. Sanghoek Kim
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  2. Seunghyun Lee
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Correspondence to Seunghyun Lee.

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Kim, S., Lee, S. A transistor based on 2D material and silicon junction. Journal of the Korean Physical Society 71, 92–100 (2017). https://doi.org/10.3938/jkps.71.92

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