Abstract
We have developed a nitrogen-incorporated silicon oxide (SiOxNy) deposition process using plasma enhanced atomic layer deposition (PEALD) for the gate insulator of recessed-gate Al-GaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. The SiOxNy film deposited on a recessed GaN surface exhibited a breakdown field of 13.2 MV/cm and a conduction band offset of 3.37 eV, which are the highest values reported for GaN MIS structures to the best of our knowledge. The fabricated normally-off transistor exhibited very promising characteristics such as a threshold voltage of 2.2 V, a maximum drain current density of 428 mA/mm, and a breakdown voltage of 928 V.
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C. Mizue, T. Hori, M. Miczek and T. Hashizume, J. J. Appl. Phys. 50, 021001 (2011).
J.-G. Lee, B.-R. Park, H.-J. Lee, M. Lee, K.-S. Seo and H.-Y. Cha, Appl. Phys. Express 5, 066502 (2012).
B. J. Baliga, Semicond. Sci. Technol. 28, 074011 (2013).
B. Lu, D. Piedra and T. Palacios, 8th International Conference on Advanced Semiconductor Devices and Microsystems, (Smolenice Castle, Smolenice, Slovakia, October 25-27, 2010).
T. Egawa, IEEE International Electron Devices Meeting, (San Francisco, California, December 10-13, USA, 2012), p. 613.
O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger and J. Hilsenbeck, J. Appl. Phys. 85, 3222 (1999).
L. F. Eastman, V. Tilak, J. Smart, B. M. Green, E. M. Chumbes, R. Dimitrov, H. Kim, O. S. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff and J. R. Shealy, IEEE Trans. Electron Devices 48, 479 (2001).
T. Oka and T. Nozawa, IEEE Electron Device Lett. 29, 668 (2008).
B.-R. Park, J.-G. Lee, W. Choi, H. Kim, K.-S. Seo and H.-Y. Cha, IEEE Electron Device Lett. 34, 354 (2013).
K.-S. Im, J.-B. Ha, K.-W. Kim, J.-S. Lee, D.-S. Kim, S.-H. Hahm and J.-H. Lee, IEEE Electron Device Lett. 31, 192 (2010).
J. J. Freedsman, T. Egawa, Y. Yamaoka, Y. Yano, A. Ubukata, T. Tabuchi and K. Matsumoto, Appl. Phys. Express 7, 041003 (2014).
T.-E. Hsieh, E. Y. Chang, Y.-Z. Song, T.-C. Lin, H.-C. Wang, S.-C. Liu S. Salahuddin and C. C. Hu, IEEE Electron Device Lett. 35, 732 (2014).
W. Choi, O. Seok, H. Ryu, H.-Y. Cha, K.-S. Seo, IEEE Electron Device Lett. 35, 175 (2014).
G. Ye, H. Wang, S. Arulkumaran, G. I Ng, R. Hofstetter, T. Li, M. J. Anand, K. S. Ang, T. K. T. Maung and S. C. Foo, Appl. Phys. Lett. 103, 142109 (2013).
S. M. George, A. W. Ott and J. W. Klaus, J. Phys. Chem. 100, 13121 (1996).
H. B. Profijt, S. E. Potts, M. C. M. van de Sanden and W. M. M. Kessels, J. Vac. Sci. Technol. A 29, 050801 (2011).
C. H. Ng, K. W. Chew and S. F. Chu, IEEE Electron Device Lett. 24, 506 (2003).
D. Morgan, M. Sultana, H. Fatima, S. Sugiyama, Q. Fareed, V. Adivarahan, M. Lachab and A. Khan, Appl. Phys. Express 4, 114101 (2011).
K. Balachander, S. Arulkumaran, T. Egawa, T. Sano and K. Baskar, J. J. Appl. Phys. 44, 4911 (2005).
J. W. Lim, S. J. Yun and J. H. Lee, ETRI J. 27, 118 (2005).
Y. Kim, J. Koo, J. Han, S. Choi, H. Jeon and C.-G. Park, J. Appl. Phys. 92, 5443 (2002).
J.-G. Lee, S.-W. Han, B.-R. Park and H.-Y. Cha, Appl. Phys. Express 7, 014101 (2014).
T. E. Cook, C. C. Fulton, W. J. Mecouch, K. M. Tracy and R. F. Davis, E. H. Hart, G. Lucovsky and R. J. Nemanich, J. Appl. Phys. 93, 3995 (2003).
J.-H. Liao, J.-Y. Hsieh, H.-J. Lin, W.-Y. Tang, C.-L. Chiang, T.-S. Lo, T.-B. Wu, L.-W. Yang, T. Yang, K.-C. Chen and C.-T. Lu, J. Phys. D: Appl. Phys. 42, 175102 (2009).
Y. Kunimune, Y. Schimada, Y. Sakurai, M. Inoue, A. Nishida, B. Han, T. Tu, H. Takamizawa, T. Shimizu, K. Inoue, F. Yano T. Nagai, T. Katayama and T. Ide, AIP Advances 6, 045121 (2016).
S. Mahapatra, D. Saha, D. Varghese and P. B. Kumar, IEEE Trans. Electron Devices 53, 1583 (2006).
M. Wang, Y. Wang, C. Zhang, B. Xie, C. P. Wen, J. Wang, Y. Hao, W. Wu, K. J. Chen and B. Shen, IEEE Trans. Electron Devices 61, 2035 (2014).
T. Shi, S. Huang, Q. Bao, X. Wang, K. Wei, H. Jiang, J. Li, C. Zhao, S. Li, Y. Zhou, H. Gao, Q. Sun, H. Yang, J. Zhang, W. Chen, Q. Zhou, B. Zhang and X. Liu, IEEE Trans. Electron Devices 63, 614 (2016).
R. Engel-Herbert, Y. Hwang and S. Stemmer, J. Appl. Phys. 108, 124101 (2010).
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Roh, SH., Eom, SK., Choi, GH. et al. Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator. Journal of the Korean Physical Society 71, 185–190 (2017). https://doi.org/10.3938/jkps.71.185
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DOI: https://doi.org/10.3938/jkps.71.185