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Heterogeneously integrated high-performance GaAs single-junction solar cells on copper

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Abstract

We present the heterogeneous integration of GaAs a single-junction solar cell (SC) on copper (Cu) via electroplating and epitaxial lift-off. We characterized the layer quality and the residual strain of the transferred SC layer through X-ray diffraction measurements and Raman spectroscopy. These results indicated that the fabrication process of SCs was quite stable, providing a high-quality film with a relatively small residual compressive strain. The SC transferred on Cu showed a highenergy conversion efficiency of 19.6% at 1sun illumination. In addition, we obtained a peak energy conversion efficiency of 20.8% at 2.5 suns in a solar concentrator.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Korea

    Dae-Myeong Geum & Euijoon Yoon

  2. Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, 02792, Korea

    Dae-Myeong Geum, Min-Su Park, SangHyeon Kim & Won Jun Choi

  3. Korea Advanced Nanofab Center (KANC), Suwon, 16629, Korea

    Chang Zoo Kim

Authors
  1. Dae-Myeong Geum
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  2. Min-Su Park
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  3. SangHyeon Kim
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  4. Won Jun Choi
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  5. Chang Zoo Kim
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  6. Euijoon Yoon
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Corresponding authors

Correspondence to SangHyeon Kim or Won Jun Choi.

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Geum, DM., Park, MS., Kim, S. et al. Heterogeneously integrated high-performance GaAs single-junction solar cells on copper. Journal of the Korean Physical Society 70, 693–698 (2017). https://doi.org/10.3938/jkps.70.693

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  • DOI: https://doi.org/10.3938/jkps.70.693

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