Journal of the Korean Physical Society

, Volume 70, Issue 2, pp 162–168 | Cite as

Annealing effect of fluorine-doped SnO2/WO3 core-shell inverse opal nanoarchitecture for photoelectrochemical water splitting

  • Seo Yoon Cho
  • Soon Hyung Kang
  • Gun Yun
  • Maheswari Balamurugan
  • Kwang-Soon Ahn


Fluorine-doped SnO2 inverse opal (FTO IO) was developed on a polystyrene bead template with a size of 350 nm (± 20 nm) by using the sol-gel-assisted spin-coating method. The resulting FTO IO film exhibited a pore diameter of 270 nm (± 5 nm), and a WO3 layer was electrodeposited with a constant charge of 400 mC/cm2, followed by a high-temperature annealing process (400, 475, and 550 °C) to increase the crystallinity of the IO films. The annealing temperature affected the morphology and the overall resistance of the thin film, thus significantly affecting the photoelectrochemical performance. In particular, the FTO/WO3 IO film annealed at 475 °C exhibited a photocurrent density of 2.9 mA/cm2 at 1.23 V versus normal hydrogen electrode, showing more than a three times higher photocurrent density in comparison with the other samples (550 °C), which is attributed to the large surface area and low resistance for the charge transport. Therefore, the annealing temperature significantly affects the morphological and the photoelectrochemical features of the FTO/WO3 IO films.


Photoelectrochemical water splitting WO3 Core-shell nanostructure Annealing temperature 


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Copyright information

© The Korean Physical Society 2017

Authors and Affiliations

  • Seo Yoon Cho
    • 1
  • Soon Hyung Kang
    • 1
  • Gun Yun
    • 2
  • Maheswari Balamurugan
    • 3
  • Kwang-Soon Ahn
    • 4
  1. 1.Department of Chemistry EducationChonnam National UniversityGwangjuKorea
  2. 2.School of Applied Chemical EngineeringChonnam National UniversityGwangjuKorea
  3. 3.Department of ChemistryChonnam National UniversityGwangjuKorea
  4. 4.Department of Chemical EngineeringYeungnam UniversityGyeongsanKorea

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