Abstract
The optical properties of a GaSb layer were investigated using temperature-dependent photoluminescence (PL) and photoreflectance (PR) measurements. The defect-related transitions were observed at 0.714 and 0.728 eV in the PL measurements at 10 K. The band-to-band transition was observed at 0.712 eV in the PL measurement at 300 K. With decreasing temperature, the behavior of the defect-related transition changed slowly compared to the band-to-band transition. The PR spectrum at 300 K showed four signals of E 0 (0.72 eV), E 0 + Δ0 (1.52 eV), E 1 (2.07 eV) and E 1 + Δ1 (2.53 eV). The behavior of the E 1 transition was similar to that of the E 0 transition because the two transitions are band-to-band transitions. The behaviors of the eh transitions from the PL spectra were similar to the results for the E 0 of the PR spectra. The two PR signals of the E 1 transitions using below and above pumping were in good agreement across all temperatures. We confirmed that the below pumping technique was useful in the PR measurement.
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Jo, HJ., So, M.G., Kim, J.S. et al. Optical properties of GaSb measured using photoluminescence and photoreflectance spectroscopy. Journal of the Korean Physical Society 69, 826–831 (2016). https://doi.org/10.3938/jkps.69.826
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DOI: https://doi.org/10.3938/jkps.69.826