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Formation properties of an InGaN active layer for high-efficiency InGaN/GaN multi-quantum-well-nanowire light-emitting diodes

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Abstract

Nitride-based nanowires (NWs) have several advantages, such as flexibility in choosing a substrate, easy fabrication, large light-emitting area, no internal electric field, enhanced light extraction, and reduced defects by strain relief, that are useful for enhancing the efficiency of light-emitting diodes (LEDs). Here, we report how crucial the formation properties of the InGaN active layer are for enhancing the efficiency of core-shell InGaN/GaN multi-quantum-well (MQW)-NW LEDs that are selectively grown on oxide templates with perfectly-circular hole patterns. The nanostructures are analyzed for two types of LEDs, one containing defect-free MQW active layer and the other containing MQW layer with defects by using high-resolution transmission electron microscopy. The I-V curve of the defect-free LED shows a rectifying behavior with an on/off ratio of ~109, typical of a diode, and the off-state leakage current of the LED with defects is much larger than that of the defect-free LED, resulting in brighter electroluminescence from the latter device. These results suggest that well-defined nonpolar InGaN/GaN MQW-NWs can be utilized for the realization of high-performance LEDs.

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Authors and Affiliations

  1. Department of Nano Science & Mechatronics Engineering, Interdisciplinary Research center for health and Nanotechnology Research Center, Konkuk University, Chungju, 27478, Korea

    Sung Won Hwang

  2. Department of Energy Systems Engineering, Chung Ang University, Seoul, 06974, Korea

    Bongsoo Lee

  3. Department of Applied Physics and Institute of Natural Sciences, Kyung Hee University, Yongin, 17104, Korea

    Suk-Ho Choi

Authors
  1. Sung Won Hwang
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  2. Bongsoo Lee
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  3. Suk-Ho Choi
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Correspondence to Suk-Ho Choi.

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Hwang, S.W., Lee, B. & Choi, SH. Formation properties of an InGaN active layer for high-efficiency InGaN/GaN multi-quantum-well-nanowire light-emitting diodes. Journal of the Korean Physical Society 69, 772–777 (2016). https://doi.org/10.3938/jkps.69.772

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  • DOI: https://doi.org/10.3938/jkps.69.772

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