Electrical transport property of ZnO thin films at high H2 pressures up to 20 bar


We have investigated the H2 pressure-dependent (from vacuum to 20 bar) current-voltage characteristics of ZnO thin films prepared by the spin-coating method. The effect of gas pressure on the conductance (G) was subtracted using He gas. The G increased with increasing H2 pressure up to 2 bar, and then monotonically decreased with the further increases in the H2 pressure. Using X-ray diffraction patterns and X-ray photoelectron spectroscopy before and after H2 exposure, we found that the H2 spillover effect played an important role in the variation of G in the ZnO film.

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Correspondence to Joonhee Kang.

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Chu, H., Kim, B.H. & Kang, J. Electrical transport property of ZnO thin films at high H2 pressures up to 20 bar. Journal of the Korean Physical Society 69, 277–281 (2016). https://doi.org/10.3938/jkps.69.277

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  • ZnO
  • Thin film
  • Electrical transport
  • Hydrogen
  • High pressure
  • Spillover