Electrical transport property of ZnO thin films at high H2 pressures up to 20 bar

Abstract

We have investigated the H2 pressure-dependent (from vacuum to 20 bar) current-voltage characteristics of ZnO thin films prepared by the spin-coating method. The effect of gas pressure on the conductance (G) was subtracted using He gas. The G increased with increasing H2 pressure up to 2 bar, and then monotonically decreased with the further increases in the H2 pressure. Using X-ray diffraction patterns and X-ray photoelectron spectroscopy before and after H2 exposure, we found that the H2 spillover effect played an important role in the variation of G in the ZnO film.

This is a preview of subscription content, log in to check access.

References

  1. [1]

    Z. L. Wang, J. Phys. Matter 16, R829 (2004).

    ADS  Article  Google Scholar 

  2. [2]

    Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S.-J. Cho and H. Morkoç, J. Appl. Phys. 98, 041301 (2005).

    ADS  Article  Google Scholar 

  3. [3]

    X. L. Chen, B. H. Xu, J. M. Xue, Y. Zhao, C. C. Wei, J. Sun, Y. Wang, X. D. Zhang and X. H. Geng, Thin Solid Films. 515, 3753 (2007).

    ADS  Article  Google Scholar 

  4. [4]

    H. Ohta, K. Kawamura, M. Orita, M. Hirano, N. Sakura and H. Hosono, Appl. Phys. Lett. 77, 475 (2000).

    ADS  Article  Google Scholar 

  5. [5]

    S. A. Studenkin, M. Cocivera, W. Kellner and H. Pascher, J. Luminescence, 91, 223 (2000).

    ADS  Article  Google Scholar 

  6. [6]

    F. K. Shan, G. X. Liu, Z. F. Liu, W. J. Lee, G. H. Lee, I. S. Kim, B. C. Shin and Y. S. Yu, J. Korean Phys. Soc. 45, 771 (2004).

    Google Scholar 

  7. [7]

    Z. L. Wang, Adv. Mater. 24, 4632 (2012).

    Article  Google Scholar 

  8. [8]

    K. S. Shin, S. S. Kim, D. H. Kim, G. C. Yoon and S. W. Kim, J. Korean Ceramic. Soc. 50, 173 (2013).

    Article  Google Scholar 

  9. [9]

    J. I. Sohn et al., Sci. Rep. 4, 5680 (2014).

    ADS  Article  Google Scholar 

  10. [10]

    E. S. Nour, C. O. Chey, M. Willander and O. Nur, Nanotech. 26, 095502 (2015).

    ADS  Article  Google Scholar 

  11. [11]

    S.-S. Kwon, W.-K. Hong, G. Jo, J. Maeng, T.-W. Kim, S. Song and T. Lee, Adv. Mater. 20, 4557 (2008).

    Article  Google Scholar 

  12. [12]

    H. S. Gu, Z. Wang and Y. M. Hu, Sensors (Basel) 12, 5517 (2012).

    Article  Google Scholar 

  13. [13]

    Y.-M. Kong, H.-M. Lee, S.-B. Huh, S.-K. Kim, Y.-Z You and D. Kim, Kor. J. Mater. Res. 20, 636 (2010).

    ADS  Article  Google Scholar 

  14. [14]

    J. Eriksson, V. Khranovskyy, F. Söderlind, P.-O. Käll, R. Yakimova and A. L. Spets, Sensors Actuators. B, Chem. 137, 94 (2009).

    Article  Google Scholar 

  15. [15]

    M. Xiao and M. Kuwabara, J. Mater. Sci. Technol. 21, 887 (2005).

    Article  Google Scholar 

  16. [16]

    F. Decremps, F. Datchi, A. M. Saitta and A. Polian, Phys. Rev. B 68, 104101 (2003).

    ADS  Article  Google Scholar 

  17. [17]

    X.Dong, F.Liu, Y.Xie, W.Shi, XiangYe and J.Z.Jiang, Arxiv.org/1206.0415 (2012).

  18. [18]

    T. Yao, S.-K. Hong and T. Hanada, Oxide and Nitride Semiconductors Processing, Properties, and Applications (Springer, Berlin Heidelberg, 2009), p. 1.

    Google Scholar 

  19. [19]

    F. Ahmed, N. Arshi, M. S. Anwar, R. Danish and B. H. Koo, RSC Adv. 4, 29249 (2014).

    Article  Google Scholar 

  20. [20]

    J.-C. Hsu, Y.-H. Lin, P. W. Wang and Y.-Y. Chen, Appl. Opt. 51, 1209 (2012).

    ADS  Article  Google Scholar 

  21. [21]

    Y. Zhao, G. Dong, L. Duan, J. Qiao, D. Zhang, L. Wang and Y. Qiu, RSC Adv. 2, 5307 (2012).

    Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to Joonhee Kang.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Chu, H., Kim, B.H. & Kang, J. Electrical transport property of ZnO thin films at high H2 pressures up to 20 bar. Journal of the Korean Physical Society 69, 277–281 (2016). https://doi.org/10.3938/jkps.69.277

Download citation

Keywords

  • ZnO
  • Thin film
  • Electrical transport
  • Hydrogen
  • High pressure
  • Spillover