Journal of the Korean Physical Society

, Volume 69, Issue 3, pp 277–281 | Cite as

Electrical transport property of ZnO thin films at high H2 pressures up to 20 bar

  • Hyunggon Chu
  • Byung Hoon Kim
  • Joonhee KangEmail author


We have investigated the H2 pressure-dependent (from vacuum to 20 bar) current-voltage characteristics of ZnO thin films prepared by the spin-coating method. The effect of gas pressure on the conductance (G) was subtracted using He gas. The G increased with increasing H2 pressure up to 2 bar, and then monotonically decreased with the further increases in the H2 pressure. Using X-ray diffraction patterns and X-ray photoelectron spectroscopy before and after H2 exposure, we found that the H2 spillover effect played an important role in the variation of G in the ZnO film.


ZnO Thin film Electrical transport Hydrogen High pressure Spillover 


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Copyright information

© The Korean Physical Society 2016

Authors and Affiliations

  1. 1.Department of PhysicsIncheon National UniversityIncheonKorea

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