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Single-step metal-organic vapor-phase diffusion for low-dark-current planar-type avalanche photodiodes

Journal of the Korean Physical Society volume 69, pages 1341–1346 (2016)Cite this article

Abstract

In this paper, a p-type diffusion process based literally on single-step metal-organic vapor-phase diffusion (MOVPD) employing diethyl zinc as the diffusion source in combination with the recessetching technique is developed to improve the dark-current characteristics of planar-type avalanche photodiodes (APDs). The developed single-step MOVPD process exhibits on excellent linear relationship between the diffusion depth and the square root of the diffusion time, which mainly results from maintaining constant source diffusion. The single-step MOVPD process without any additional thermal activation process achieves a surface doping concentration of 1.9 × 1018 cm -3, which is sufficient to form ohmic contact. The measured diffusion profiles of the APDs clearly reveal the presence of a two-dimensional diffusion front formed by the recess-etched and guard-ring regions. The impact of this p-type diffusion process on the performance of the APD devices has also been demonstrated by exhibiting improved dark-current characteristics for the fabricated APDs.

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Authors and Affiliations

  1. Korea Advanced Nano Fab Center (KANC), Suwon, 16229, Korea

    Dong-Hwan Jun, Hae Yong Jeong, Youngjo Kim, Chan-Soo Shin, Kyung Ho Park & Won-Kyu Park

  2. Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Korea

    Min-Su Kim & Sangin Kim

  3. Korea Institute of Science and Technology, Seoul, 02455, Korea

    Sang Wook Han & Sung Moon

Authors
  1. Dong-Hwan Jun
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  2. Hae Yong Jeong
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  3. Youngjo Kim
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  4. Chan-Soo Shin
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  5. Kyung Ho Park
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  6. Won-Kyu Park
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  7. Min-Su Kim
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  8. Sangin Kim
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  9. Sang Wook Han
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  10. Sung Moon
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Correspondence to Sang Wook Han.

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Jun, DH., Jeong, H.Y., Kim, Y. et al. Single-step metal-organic vapor-phase diffusion for low-dark-current planar-type avalanche photodiodes. Journal of the Korean Physical Society 69, 1341–1346 (2016). https://doi.org/10.3938/jkps.69.1341

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  • DOI: https://doi.org/10.3938/jkps.69.1341

Keywords

  • Photodiodes
  • III-V materials
  • diffusion