Abstract
Heavily tellurium (Te)-doped InGaP layers in tunnel junctions (TJs) grown by using metalorganic chemical vapor deposition (MOCVD) were investigated to improve the device performance of InGaP/InGaAs/Ge triple-junction solar cells. Three different doping techniques were employed to grow the Te-doped InGaP layers in the TJ; Te doping, Te and Si co-doping and Te pre-doping. Compared to other samples, the external quantum efficiency (EQE) profiles in the InGaP top cell were found to be higher for the sample with Te pre-doping. Under a concentrated light condition, higher fill factor (FF) and conversion efficiency were also observed for the sample with Te pre-doping. These indicate that the crystalline qualities of the upper TJ, composed of a p-GaAs/n-InGaP TJ, and the InGaP top cell were improved by using the Te pre-doping method.
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Jung, S.H., Kim, C.Z., Kim, Y. et al. Comparative investigation of InGaP/InGaAs/Ge triple-junction solar cells using different Te-doped InGaP layers in tunnel junctions. Journal of the Korean Physical Society 68, 792–796 (2016). https://doi.org/10.3938/jkps.68.792
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DOI: https://doi.org/10.3938/jkps.68.792