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Carbon-nanotube electron-beam (C-beam) crystallization technique for silicon TFTs

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Abstract

We introduced a carbon-nanotube (CNT) electron beam (C-beam) for thin film crystallization and thin film transistor (TFT) applications. As a source of electron emission, a CNT emitter which had been grown on a silicon wafer with a resist-assisted patterning (RAP) process was used. By using the C-beam exposure, we successfully crystallized a silicon thin film that had nano-sized crystalline grains. The distribution of crystalline grain size was about 10 ∼ 30 nm. This nanocrystalline silicon thin film definitely had three crystalline directions which are (111), (220) and (311), respectively. The silicon TFTs crystallized by using a C-beam exposure showed a field effect mobility of 20 cm2/Vs and an on/off ratio of more than 107. The C-beam exposure can modify the bonding network of amorphous silicon with its proper energy.

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Authors and Affiliations

  1. Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul, 02447, Korea

    Su Woong Lee, Jung Su Kang & Kyu Chang Park

Authors
  1. Su Woong Lee
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  2. Jung Su Kang
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  3. Kyu Chang Park
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Correspondence to Kyu Chang Park.

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Lee, S.W., Kang, J.S. & Park, K.C. Carbon-nanotube electron-beam (C-beam) crystallization technique for silicon TFTs. Journal of the Korean Physical Society 68, 528–532 (2016). https://doi.org/10.3938/jkps.68.528

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  • DOI: https://doi.org/10.3938/jkps.68.528

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