Abstract
We investigated how a tungsten diffusion barrier layer affected the electrical properties of AuBe/Au contacts to a p-GaP window layer (na = 5 × 1019 cm−3) for an AlGaInP-based light emitting diode. All of the as-deposited samples were ohmic. After annealing at 500 °C, the AuBe/Au contacts were electrically degraded with a specific contact resistivity of 1.0 × 10−4 Ωcm2. However, the electrical properties of the W-based contacts were improved, having a contact resistivity of 5.0 × 10−6 Ωcm2. The X-ray photoemission spectroscopy (XPS) results showed that the Ga 2p core level for the annealed AuBe/Au contacts shifted to the high binding-energy side. On the other hand, that for the AuBe/W/Au contacts shifted toward the lower binding-energy side. For the AuBe/Au contacts, both Be and P atoms were shown to be outdiffused into the metal contact after annealing. However, for the AuBe/W/Au contacts, the outdiffusion of Be atoms was prevented by the W barrier layer, and the Be atoms were indiffused into GaP. Based on the X-ray photoemission spectroscopy (XPS), Auger electron spectroscopy (AES), and electrical results, the annealing-induced electrical degradation and improvement are described and discussed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
H. Sugawara, M. Ishikawa and G. Hatakoshi, Appl. Phys. Lett. 58, 1010 (1991).
C. S. Chang, Y. K. Su, S. J. Chang, P. T. Chang, Y. R. Wu, K. H. Huang and T. P. Chen, IEEE J. Quantum Electron. 34, 77 (1998).
S. C. Hsu, D. S. Wuu, C. Y. Lee, J. Y. Su and R. H. Horng, IEEE Photonics Technol. Lett. 19, 492 (2007).
H. M. Lo, S. C. Shei, X. F. Zeng, S. J. Chang and H. Y. Lin, IEEE J. Quantum Electron. 47, 803 (2011).
C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford and V. M. Robbins, Appl. Phys. Lett. 57, 2937 (1990).
F. A. Kish et al., Appl. Phys. Lett. 64, 2839 (1994).
H. M. Lo, S. C. Shei, X. F. Zeng, S. J. Chang and H. Y. Lin, J. Electrochem. Soc. 158, H506 (2011).
B. J. Li, E. K. Liu and F. J. Zhang, Solid-State Electron. 41, 917 (1997).
T. F. Lei and G. K. Jeng, Solid-State Electron. 31, 109 (1988).
C. F. Lin, D. B. Ingerly and Y. A. Chang, Appl. Phys. Lett. 69, 3543 (1996).
T. V. Blank, Y. A. Goldberg, O. V. Konstantinov, V. G. Nikitin and E. A. Posse, Tech. Phys. Lett. 30, 806 (2004).
J. Pfeifer, Solid-State Electron. 19, 927 (1976).
W. C. Cheng and H. L. Lin, Jpn. J. Appl. Phys. (Part 1) 45, 8556 (2006).
B. Pecz, R. Veresegyhazy, G. Radnoczi, A. Barna, I. Mojzes, O. Geszti and G. Vincze, J. Appl. Phys. 70, 332 (1991).
I. J. Fritz, L. R. Dawson and G. C. Osbourn, J. Electron. Mater. 14, 73 (1985).
Q. Z. Xu and L. W. Yang, IEEE Trans. Electron Devices 58, 2582 (2011).
T. Ogawa, H. Morota and S. Adachi, J. Phys. D: Appl. Phys. 40, 4603 (2007).
J. X. Sun, D. J. Seo, W. L. O’Brien, F. J. Himpsel, A. B. Ellis and T. F. Kuech, J. Appl. Phys. 85, 969 (1999).
T. J. Yu, T. Tanno, K. Suto and J. Nishizawa, J. Electron. Mater. 31, 591 (2002).
J. A. Vanvechten, J. Electrochem. Soc. 122, 419 (1975).
Y. K. Krutogolov, Semiconductors 44, 752 (2010).
H. Kim, J. H. Ryou, R. D. Dupuis, S. N. Lee, Y. Park, J. W. Jeon and T. Y. Seong, Appl. Phys. Lett. 93, 192106 (2008).
V. G. Weizer and N. S. Fatemi, J. Appl. Phys. 69, 8253 (1991).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Kim, DH., Kang, D., Park, JS. et al. Thermally stable AuBe-based ohmic contacts to p-type GaP for AlGaInP-based light-emitting diode by using a tungsten barrier layer. Journal of the Korean Physical Society 68, 306–310 (2016). https://doi.org/10.3938/jkps.68.306
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.68.306