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Doping-concentration-dependent electric and thermoelectric properties of 2-dimensional silicon thin films

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Abstract

To study the electric and the thermoelectric properties of silicon thin films (SiTFs), we fabricated devices having SiTFs by using conventional complementary metal-oxide-semiconductor (CMOS)-compatible processes for mass production and extendibility. The conductivities and the Seebeck coefficients of SiTFs for dose concentrations of 5 × 1014 cm -2, 1 × 1015 cm -2 and 5 × 1015 cm -2 and for temperatures in the range of 310 to 430 K were measured by using homemade setup. The measured power factors of the SiTFs showed a slight increasing tendency with increasing measurement temperature and were maximum at a dose concentration of 1 × 1015 cm -2 for both n- and p-type films at 330 K.

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Authors and Affiliations

  1. Dimensional New Devices Research Section, Electronics and Telecommunications Research Institute, Daejeon, 34129, Korea

    Junsoo Kim, Soo-Jung Kim, Jung Yoon Kwon, Wonchul Choi, Hyuk Jin Kim, Taekwang Kim, Sol Yee Im, Jaewoo Lee, Seung-Min Lee & Seung Eon Moon

  2. Department of Advanced Engineering, University of Science and Technology, Daejeon, 34113, Korea

    Jung Yoon Kwon & Seung Eon Moon

  3. Department of Materials Science & Engineering, Hallym University, Chuncheon, 24252, Korea

    Moongyu Jang

Authors
  1. Junsoo Kim
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  2. Soo-Jung Kim
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  3. Jung Yoon Kwon
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  4. Wonchul Choi
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  5. Hyuk Jin Kim
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  6. Taekwang Kim
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  7. Sol Yee Im
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  8. Jaewoo Lee
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  9. Seung-Min Lee
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  10. Moongyu Jang
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  11. Seung Eon Moon
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Corresponding author

Correspondence to Seung Eon Moon.

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These authors contributed equally to this work.

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Kim, J., Kim, SJ., Kwon, J.Y. et al. Doping-concentration-dependent electric and thermoelectric properties of 2-dimensional silicon thin films. Journal of the Korean Physical Society 68, 1472–1475 (2016). https://doi.org/10.3938/jkps.68.1472

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  • DOI: https://doi.org/10.3938/jkps.68.1472

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