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Modification of electrical and piezoelectric properties of ZnO nanorods based on arsenic incorporation via low temperature spin-on-dopant method

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Abstract

We report on the control of the electrical and the piezoelectric properties of ZnO nanorods (NRs) by incorporation of arsenic (As) elements via a low-temperature processed spin-on-dopant (SOD) method. The structural investigations for the SOD-treated ZnO NRs at different temperatures show a negligible change in morphology at temperatures up to 550 °C and melting of the ZnO NRs at 600 °C. Low-temperature photoluminescence (PL) spectra show gradual development of acceptor-related emission peaks with increasing SOD treatment temperature from 450 to 550 °C, which indicates the successful incorporation of As atoms into the ZnO NRs. An As Zn -2V Zn shallow acceptor model is suggested by considering the formation energy of the interstitial point-defect complex for the modification of the electrical properties of ZnO NRs. A ZnO NR/n-Si heterojunction showed better rectifying behavior with increasing SOD treatment temperature, indicating better incorporation of As-dopants at higher SOD treatment temperatures. A piezoelectric nanogenerator was fabricated as a device application of the electrical-property-modified ZnO NRs. The nanogenerator showed enhanced piezoelectric output potential after doping due to the elimination of the screening effect by free charge carriers in the ZnO NRs.

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Authors and Affiliations

  1. Department of Engineering Science, University of Oxford, Parks Road, Oxford, OX1 3PJ, United Kingdom

    Jung Inn Sohn, Seung Nam Cha & Jong Min Kim

  2. Energy Research Division, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 711-873, Korea

    Seong-Ho Baek & Jae Hyun Kim

  3. Department of Information & Communication Engineering, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 711-873, Korea

    Jae Eun Jang

  4. Department of Electronic Engineering, Yeungnam University, Gyeongsan, 712-749, Korea

    Yong-Il Jung & Il-Kyu Park

Authors
  1. Jung Inn Sohn
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  2. Seung Nam Cha
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  3. Jong Min Kim
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  4. Seong-Ho Baek
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  5. Jae Hyun Kim
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  6. Jae Eun Jang
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  7. Yong-Il Jung
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  8. Il-Kyu Park
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Correspondence to Il-Kyu Park.

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These authors contributed equally to this work.

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Sohn, J.I., Cha, S.N., Kim, J.M. et al. Modification of electrical and piezoelectric properties of ZnO nanorods based on arsenic incorporation via low temperature spin-on-dopant method. Journal of the Korean Physical Society 67, 930–935 (2015). https://doi.org/10.3938/jkps.67.930

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  • DOI: https://doi.org/10.3938/jkps.67.930

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