Abstract
Silicon-nitride (SiN x ) films were deposited at different substrate temperatures, RF powers, working gas pressures, and reactant gas flow ratio combinations by using a plasma-enhanced chemical vapor deposition (PECVD) system with a tris(dimethylamino)silane (TDMAS) precursor and ammonia (NH3) or nitrogen (N2) gas. The thickness uniformity of the SiN x fabricated by using PECVD was better than 2% over 6-inch substrates. The chemical structure of the SiN x thin films was studied by using X-ray photoelectron spectroscopy (XPS). The leakage current density of the deposited films was maintained at about 5.7 × 10−8 A/cm2 for the case of the TDMAS-NH3 combination and about 1 × 10−7 A/cm2 for the TDMAS-N2 case at a 1-MV/cm electric field. The resistivity in case at an electric field at 1 MV/cm was more than 1 × 1013 Ω·cm.
Similar content being viewed by others
References
S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era, Vol. 1: Process Technology (Lattice Press, Sunset Beach, California, 2000).
A. El amrani, I. Menous, L. Mahiou, R. Tadjine, A. Touati and A. Lefgoum, Renewable Energy 33, 2289 (2008).
R. Gareth and W. Scherber, J. Electrochem. Soc. 119, 1248 (1972).
N. J. Nelson, US Patent 4,158,717 (1979).
M. J. Loboda, J. A. Seifferly, C. M. Grove and R. F. Schneider, MRS Proceedings 447, 145 (1996).
M. L. O’Neill, H. R. Bowen, A. Derecskei-Kovacs, K. S. Cuthill, B. Han and M. Xiao, The Electrochem. Soc. Interface 20, 33 (2011).
Y. Kinoshita, F. Hirose, H. Miya, K. Hirahara, Y. Kimura and M. Niwano, Electrochem. Solid-State Lett. 10, G80 (2007).
T. Karabacak, Y.-P. Zhao, G.-C. Wang and T.-M. Lu, Phys. Rev. B 66, 075329 (2002).
S. M. Sze, Physics of Semiconductor Devices (John Wiley & Sons, New York, 1981).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Kim, KH. Fabrication and properties of silicon-nitride films deposited by using PECVD with a tris(dimethylamino)silane of aminosilane precursor. Journal of the Korean Physical Society 67, 2115–2119 (2015). https://doi.org/10.3938/jkps.67.2115
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.67.2115