Abstract
The model of GaAs1−y N y (y = 0.001) as a heavily-doped semiconductor in the ultra-dilute region is attentively examined. The model enables GaAsN to be viewed as a disordered assembly of three-dimensional quantum dots (potential wells) caused by random potential fluctuations from nitrogen pairs in the system. Consequently, Feynman’s path-integration technique is applied in order to quantify the density of states (DOS) in the vicinity of the conduction band edge. The obtained DOS tail, even though overestimated, still clearly shows a much shorter tail than that the experimental result does. This shows that the heavily-doped semiconductor viewpoint is not proper for GaAsN, not even in the ultra-dilute region. Furthermore, this also suggests that the impurity wave function overlap is not a basic mechanism of band gap reduction.
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Sukpitak, J., Sa-yakanit, V. Theoretical investigation of the heavily-doped semiconductor aspect of ultra-dilute GaAsN. Journal of the Korean Physical Society 67, 2112–2114 (2015). https://doi.org/10.3938/jkps.67.2112
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DOI: https://doi.org/10.3938/jkps.67.2112