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Temperature-dependent hall measurement of AlGaN/GaN heterostructures on Si substrates

Abstract

For AlGaN/GaN high electron mobility transistor (HEMT) devices grown on Si substrates, we studied the influence of the surface defect density on the Hall mobility and the carrier concentration. We established a Hall measurement system over wide temperature range (8 ~ 800 K) by combining a closed-cycle refrigerator and a heating chamber. The two-dimensional electron gas (2DEG) in the epitaxially-grown AlGaN/GaN HEMT structures showed high mobilities, i.e., > 1500 cm2/Vs at 300 K and > 7000 cm2/Vs at 8 K. As the surface defect density increased, the mobility values at 8 K decreased due to scattering from charged impurities at low temperatures. However, at high temperatures where optical phonons are a major source of scattering, the mobilities do not show a significant dependence on the surface defect density. In addition, the carrier density showed an unexpected decrease at temperatures above 300 K, which is ascribed to a change in the misfit strain upon heating.

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References

  1. W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda and I. Omura, IEEE Trans. Electron Devices 53, 356 (2006).

    ADS  Article  Google Scholar 

  2. S. J. Pearton, J. C. Zolper, R. J. Shul and F. Ren, J. Appl. Phys. 86, 1 (1999).

    ADS  Article  Google Scholar 

  3. H. Shin, K. Jeon, Y. Jang, M. Gang, M. Choi, W. Park and K. Park, J. Korean Phys. Soc. 63, 1621 (2013).

    ADS  Article  Google Scholar 

  4. M. Tapajna, S. W. Kaun, M. H. Wong, F. Gao, T. Palacios, U. K. Mishra, J. S. Speck and M. Kuball, Appl. Phys. Lett. 99, 223501 (2011).

  5. S. W. Kaun, P. G. Burke, M. H. Wong, E. C. H. Kyle, U. K. Mishra and J. S. Speck, Appl. Phys. Lett. 101, 262102 (2012).

  6. H. F. Liu, S. B. Dolmanan, L. Zhang, S. J. Chua, D. Z. Chi, M. Heuken and S. Tripathy, J. Appl. Phys. 113, 023510 (2013).

  7. O. Ambacher et al., J. Appl. Phys. 85, 3222 (1999).

    ADS  Article  Google Scholar 

  8. M. Aziz and T. Palacios, J. Appl. Phys. 108, 023707 (2010).

  9. H. Tokuda, J. Ymazaki and M. Kuzuhara, J. Appl. Phys. 108, 104509 (2010).

  10. A. Asgari, S. Babanejad and L. Faraone, J. Appl. Phys. 110, 113713 (2011).

  11. L. Pfeiffer, K. W. West, H. L. Stormer and K. W. Baldwin, Appl. Phys. Lett. 55, 1888 (1989).

    ADS  Article  Google Scholar 

  12. R. Fivaz and E. Mooser, Phys. Rev. 163, 743 (1967).

    ADS  Article  Google Scholar 

  13. J. H. Shin, Y. J. Jo, K.-C. Kim, T. Jang and K. S. Kim, Appl. Phys. Lett. 100, 111908 (2012).

  14. O. Celik, E. Tiras, S. Ardali, S. B. Lisesivdin and E. Ozbay Cent. Eur, J. Phys. 10, 485 (2012).

    Article  Google Scholar 

  15. B. S. Joo, M. Han, Y. J. Chang, J. H. Shin, S. Y. Jang and T. Jang, J. Korean Phys. Soc. 63, 2314 (2013).

    ADS  Article  Google Scholar 

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Correspondence to Young Jun Chang.

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Lee, I.H., Kim, Y.H., Chang, Y.J. et al. Temperature-dependent hall measurement of AlGaN/GaN heterostructures on Si substrates. Journal of the Korean Physical Society 66, 61–64 (2015). https://doi.org/10.3938/jkps.66.61

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  • DOI: https://doi.org/10.3938/jkps.66.61

Keywords

  • GaN, Hall measurement
  • High electron mobility transistor
  • Impurity scattering