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The effect of h-BN buffer layers in bilayer graphene on Co (111)

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Abstract

Understanding of the interface of Co/graphene is essential for applications of graphene-based devices, as well as in the process of graphene synthesis. In this paper, the Co/graphene interface, including five structures of bilayer graphene (BLG) on Co (111) surface with bilayer or monolayer BN buffer sheets, is investigated by using density functional theory calculations. The corresponding atomic and electronic structures and Mulliken charge populations are also analyzed. The bilayer BN sheets are found to be the thinnest insulator for the backside Co metal gate, which shields BLG from Co substrate pining, decreases the charges influenced by the substrate, and improves BLG transport mobility.

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Authors and Affiliations

  1. Center for Coordination Bond Engineering, School of Materials Science and Engineering, China Jiliang University, Hangzhou, 310018, China

    Can Li

  2. College of Electrical Engineering, Department of Radiology, Second Affiliated Hospital, Zhejiang University, Hangzhou, 310027, China

    Yan Liu, Bin Zhang, Tao Wang, Qing Guo & Kuang Sheng

  3. Division of Electronics and Informatics, Gunma University, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan

    You Yin

Authors
  1. Can Li
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  2. Yan Liu
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  3. Bin Zhang
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  4. Tao Wang
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  5. Qing Guo
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  6. Kuang Sheng
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  7. You Yin
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Correspondence to Tao Wang.

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Li, C., Liu, Y., Zhang, B. et al. The effect of h-BN buffer layers in bilayer graphene on Co (111). Journal of the Korean Physical Society 66, 1631–1636 (2015). https://doi.org/10.3938/jkps.66.1631

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  • DOI: https://doi.org/10.3938/jkps.66.1631

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