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Improving the gas barrier and mechanical properties of a-SiO x films synthesized at low temperature by using high energy and hydrogen flow rate control

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Abstract

Silicon-oxide thin films were deposited on polyethylene-terephthalate (PET) and glass substrates for applications in transparent barrier packaging and replacement display cover glasses by using plasma-enhanced chemical vapor deposition (PECVD). The bias conditions and the input power in the radio-frequency plasma were changed to optimize the gas barrier and the mechanical properties of the silicon-oxide thin film. We made an advanced plasma source for large-area PECVD (370 × 470 mm2 size). The dissociation of the octamethylycyclodisiloxane (OMCTS) precursor was controlled by using the plasma processing parameters. The gas barrier and the mechanical properties of the a-SiO x film were improved by controlling the plasma process parameters. The gas barrier and the mechanical properties of the coatings were examined using a Permatran (MOCON) system and a pencil hardness measurement. The chemical structure properties of the coatings were examined by using Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). The properties of the a-SiO x thin films were improved by the dissociation of OMCTS obtained by using various appropriate plasma processing parameters.

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Authors and Affiliations

  1. NU-SKKU Joint Institute for Plasma-Nano Materials, Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, 440-746, Korea

    Su B. Jin, Wen Long, B. B. Sahu & Jeon G. Han

  2. NU-SKKU Joint Institute for Plasma-Nano Materials, Plasma Nanotechnology Research Center, Nagoya University, Furu-cho, Chikusa-ku, Nagoya, 464-8603, Japan

    M. Hori

Authors
  1. Su B. Jin
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  2. Wen Long
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  3. B. B. Sahu
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  4. Jeon G. Han
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  5. M. Hori
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Correspondence to Jeon G. Han.

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Jin, S.B., Long, W., Sahu, B.B. et al. Improving the gas barrier and mechanical properties of a-SiO x films synthesized at low temperature by using high energy and hydrogen flow rate control. Journal of the Korean Physical Society 66, 1410–1415 (2015). https://doi.org/10.3938/jkps.66.1410

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  • DOI: https://doi.org/10.3938/jkps.66.1410

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