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Thermometry for Dirac fermions in graphene

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Abstract

We use both the zero-magnetic-field resistivity and the phase coherence time determined by weak localization as independent thermometers for Dirac fermions (DF) in multilayer graphene. In the high current (I) region, there exists a simple power law T DF ∝ I ~0.5, where T DF is the effective Dirac fermion temperature for epitaxial graphene on SiC. In contrast, T DF ∝ I ~1 in exfoliated multilayer graphene. We discuss possible reasons for the different power laws observed in these multilayer graphene systems. Our experimental results on DF-phonon scattering may find applications in graphene-based nanoelectronics.

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Authors and Affiliations

  1. Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taipei, Taiwan

    Fan-Hung Liu, Chang-Shun Hsu & Shun-Tsung Lo

  2. Department of Physics, National Taiwan University, Taipei 106, Taipei, Taiwan

    Chiashain Chuang, Lung-I Huang, Tak-Pong Woo & Chi-Te Liang

  3. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan

    Y. Fukuyama

  4. National Institute of Standards and Technology (NIST) Gaithersburg, MD, 20899, Gaithersburg, USA

    Y. Yang & R. E. Elmquist

  5. International Center for Quantum Materials, Peking University, Beijing, 100871, China

    Pengjie Wang & Xi Lin

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  1. Fan-Hung Liu
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Correspondence to Tak-Pong Woo.

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Liu, FH., Hsu, CS., Lo, ST. et al. Thermometry for Dirac fermions in graphene. Journal of the Korean Physical Society 66, 1–6 (2015). https://doi.org/10.3938/jkps.66.1

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