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High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

Abstract

We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (V th ) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO X distributed on the a-IGZO surface reduced the adsorption and the desorption of H2O and O2. This process is applicable to the TFT manufacturing process with a variable sputtering target.

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Correspondence to Jea-Gun Park.

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Lee, HR., Park, JG. High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer. Journal of the Korean Physical Society 65, 1174–1178 (2014). https://doi.org/10.3938/jkps.65.1174

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  • DOI: https://doi.org/10.3938/jkps.65.1174

Keywords

  • IGZO TFT
  • Stability
  • NBIS
  • Si doped