Abstract
Using reactive sputtering, we fabricated stoichiometric CuIn1−x Ga x Se2 (CIGS) thin films. Both Cu0.6Ga0.4 (CuGa) and Cu0.4In0.6 (CuIn) alloy targets were simultaneously sputtered under the delivery of elemental Se produced from a thermal cracker. By changing the sputtering rates of the CuGa and the CuIn, we were able to obtain the composition ratios of Cu/(Ga+In) and Ga/(Ga+In) in the range of 0.71–0.95 and 0.10–0.30, respectively. Both the grain size and the surface roughness of the CIGS film increased as the Cu/(Ga+In) ratio increased. In the X-ray diffraction analysis on CIGS films of 0.9 m, preferential growth with a [112] orientation was found, and reflections from the (211), (220)/(204), (301), (312)/(116), (400)/(008), and (332)/(316) planes were observed. The CIGS films showed the existence of Cu2−x Se phases in the Cu-rich samples and ordered defect compound (ODC) phases in the Cu-poor films, as confirmed in the Raman measurements. A best device performance of η = 8.1%, V oc = 0.442 V, J sc = 34.3 mA/cm2, and FF = 53.4% was obtained from a cell fabricated with a CIGS layer (t = 0.9 µm) with the Cu/(Ga+In) ratio = 0.71 and the Ga/(Ga+In) ratio = 0.10.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
M. Kaelin, D. Rudmann and A. N. Tiwari, Solar Energy 77, 749 (2004).
S. Ishizuka, H. Shibata, A. Yamada, P. Fons, K. Sakurai, K. Matsubara and S. Niki, Appl. Phys. Lett. 91, 041902 (2007).
A. Jager-Waldau, Sol. Energ. Mat. Sol. Cell. 95, 1509 (2011).
P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann and M. Powalla, Prog. Photovolt.: Res. Appl. 19, 894 (2011).
J. H. Shi, Z. Q. Ki, D. W. Zhang, Q. Q. Liu, Z. Sun and S. M. Huang, Prog. Photovolt.: Res. Appl. 19, 160 (2011).
S. Niki, M. Contreras, I. Repins, M. Powalla, K. Kushiya, S. Ishizuka and K. Matsubara, Prog. Photovolt.: Res. Appl. 18, 453 (2010).
D. Xia, J. Li, M. Xu and X. Zhao, J. Non-Crystal. Solids 354, 47 (2008).
W. K. Kim, G. M. Hanket and W. N. Shafarman, Proceedings of 34th IEEE Photovoltaic Specialists Conference (PVSC), (Philadelphia, USA, June 07–12, 2009), p. 844.
K. Kim, G. M. Hanket, T. Huynh and W. N. Shafarman, J. Appl. Phys. 111, 083710 (2012).
N. M. Park, H. S. Lee, D. H. Cho, Y. D. Chung, K. H. Kim, K. S. Lee and J. Kim, Prog. Photovolt.: Res. Appl. 20, 899 (2012).
N. M. Park, H. S. Lee and J. Kim, ETRI J. 34, 779 (2012).
H. S. Lee, N. M. Park, K. S. Lee, J. Kim and H. J. Chang, J. Kor. Phys. Soc. 60, 1753 (2012).
D. H. Cho, Y. D. Chung, K. S. Lee, N. M. Park, K. H. Kim, H. W. Choi and J. Kim, Thin Solid Films 520, 2115 (2012).
R. Friedfeld, R. P. Raffaelle and J. G. Mantovani, Sol. Energ. Mat. Sol. Cell. 58, 375 (1999).
S. Jung, S. Ahn, J. H. Yun, J. Gwak, D. Kim and K. Yoon, Curr. Appl. Phys. 10, 990 (2010).
S. Ishizuka, A. Yamada, K. Matsubara, P. Fons, K. Sakurai and S. Niki, Curr. Appl. Phys. 10, S154 (2010).
W. Witte, R. Kniese and M. Powalla, Thin Solid Films 517, 867 (2008).
T. P. Hsieh, C. C. Chuang, C. S. Wu, J. C. Chang, J. W. Guo and W. C. Chen, Solid-State Electron. 56, 175 (2011).
H. Miyazaki, R. Mikami, A. Yamada and M. Konagai, J. Phys. Chem. Solid. 64, 2055 (2003).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Kim, J., Park, NM. Growth and structural properties of reactively co-sputtered CIGS films and their solar cell applications. Journal of the Korean Physical Society 64, 465–470 (2014). https://doi.org/10.3938/jkps.64.465
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.64.465