Skip to main content
SpringerLink
Log in

Reactively sputtered MgAl2O4 barrier layers for Heusler tunnel junctions

  • Published:
Journal of the Korean Physical Society Aims and scope Submit manuscript

Abstract

Epitaxial MgAl2O4 thin films were deposited on a lattice-matched Heusler alloy, Fe2CrSi, by reactive magnetron sputtering of an MgAl2 target in an Ar+O2 atmosphere. Epitaxial Fe2CrSi/MgAl2O4 junctions were obtained by inserting an ultrathin MgAl2 interlayer, which worked as a protective layer for oxidization at the surface of the Fe2CrSi. The growth of MgAl2O4 was found to be very sensitive to the MgAl2 thickness and the oxygen partial pressure during the deposition of MgAl2O4. Both epitaxial growth and characteristics of the efficient tunneling barrier were obtained in an Fe2CrSi/MgAl2O4 (3 nm)/CoFe tunneling device for MgAl2O4 thin films grown by reactive sputtering. The present epitaxial MgAl2O4 barrier deposited by reactive sputtering is expected to realize high performance spintronic devices.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J. Mathon and A. Umerski, Phys. Rev. B 63, 220403R (2001).

    Article  ADS  Google Scholar 

  2. W. H. Butler, X. G. Zhang, T. C. Schulthess and J. M. Maclaren, Phys. Rev. B 63, 054416 (2001).

    Article  ADS  Google Scholar 

  3. I. Galanakis, P. H. Dederichs and N. Papanikolaou, Phys. Rev. B 66, 174429 (2002).

    Article  ADS  Google Scholar 

  4. Y. Miura, H. Uchida, Y. Oba, K. Nagao and M. Shirai, J. Phys.: Condens. Matter 19, 365228 (2007).

    Article  Google Scholar 

  5. T. Miyajima, M. Oogane, Y. Kotaka, T. Yamazaki, M. Tsukada, Y. Kataoka, H. Naganuma and Y. Ando, Appl. Phys. Expr. 2, 093001 (2009).

    Article  ADS  Google Scholar 

  6. N. Fukatani, C. Shishikura, Y. Takeda and H. Asano, Appl. Phys. Express 2, 053001 (2009).

    Article  ADS  Google Scholar 

  7. N. Fukatani, K. Ueda and H. Asano, J. Appl. Phys. 109, 073911 (2011).

    Article  ADS  Google Scholar 

  8. H. Sukegawa, H. Xiu, T. Ohkubo, T. Furubayasi, T. Niizeki, W. Wang, S. Kasai, S. Mitani, K. Inomata and K. Hono, Appl. Phys. Lett. 96, 212505 (2010).

    Article  ADS  Google Scholar 

  9. L. Hongzhi, Z. Zhiyong, M. Li, X. Shifeng, L. Heyan, Q. Jingping, L. Yanhxian and W. Guangheng, J. Phys. D: Appl. Phys. 40, 7172 (2007).

    Google Scholar 

  10. S. Yoshimura, H. Asano, Y. Nakamura, K. Yamaji, Y. Takeda, M. Matsui, S. Ishida, Y. Nozaki and K. Matsuyama, J. Appl. Phys. 103, 07D716 (2008).

    Article  Google Scholar 

  11. B. A. Hamad, Eur. Phys. J. B 80, 11 (2011).

    Article  ADS  Google Scholar 

  12. R. J. Bratton, J. Am. Ceram. Soc. 57, 283 (1974).

    Article  Google Scholar 

  13. A. Ghosh, K. A. White, M. G. Jenkins, A. S. Kobayashi and R. C. Bradt, J. Am. Ceram. Soc. 74, 1624 (1991).

    Article  Google Scholar 

  14. G. C. Wei, J. Phys. D: Appl. Phys. 38, 3057 (2005).

    Article  ADS  Google Scholar 

  15. S. Yuasa, A. Fukushima, T. Nagahama, K. Ando and Y. Suzuki, Jpn. J. Appl. Phys. 43, L588 (2004).

    Article  ADS  Google Scholar 

  16. T. Ishikawa, T. Marukame, H. Kijima, K. I. Matsuda, T. Uemura, M. Arita and M. Yamamoto, Appl. Phys. Lett. 89, 192505 (2006).

    Article  ADS  Google Scholar 

  17. I. V. Afanasyev-Charkin, D. W. Cooke, V. T. Gritsyna, M. Ishimaru and K. E. Sickafus, Vacuum, 58, 2 (2000).

    Article  Google Scholar 

  18. J. Robertson and C. W. Chen, Appl. Phys. Lett. 74, 1168 (1998).

    Article  ADS  Google Scholar 

  19. M. S. Tsai and T. Y. Tseng, Materials Chemistry and Physics 57, 47 (1998).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Crystalline Materials Science, Nagoya University, Nagoya, 464-8603, Japan

    K. Inagaki, N. Fukatani, K. Mari, H. Fujita, T. Miyawaki, K. Ueda & H. Asano

Authors
  1. K. Inagaki
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. N. Fukatani
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. K. Mari
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. H. Fujita
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. T. Miyawaki
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. K. Ueda
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. H. Asano
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to K. Inagaki.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Inagaki, K., Fukatani, N., Mari, K. et al. Reactively sputtered MgAl2O4 barrier layers for Heusler tunnel junctions. Journal of the Korean Physical Society 63, 830–834 (2013). https://doi.org/10.3938/jkps.63.830

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.3938/jkps.63.830

Keywords

Search

Navigation