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High-resolution X-ray photoemission study of photo-grown Ga2O3 in GaN/AlGaN/GaN heterostructures on Si substrates


For GaN/AlGaN/GaN heterostuructures grown on Si substrates, we investigated the changes in the chemical compositions during photochemical oxidation. We utilized synchtrotron-based high-resolution X-ray photoemission spectroscopy to precisely analyze the stoichiometry change. Epitaxially-grown GaN/AlGaN/GaN multilayer films showed a single-crystalline structure and the dominant bonding character of Ga-N near the surface. After photoelectrochemical oxidation with deionized water, the Ga-N bonding transformed into the Ga-O bonding, in which the stoichiometry was confirmed to be Ga2O3. Thus, photoelectrochemical oxidation with water may be a good candidate for fabricating the gate dielectric layer, Ga2O3, for GaN-based power transistors.

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Correspondence to Young Jun Chang.

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Joo, B.S., Han, M., Chang, Y.J. et al. High-resolution X-ray photoemission study of photo-grown Ga2O3 in GaN/AlGaN/GaN heterostructures on Si substrates. Journal of the Korean Physical Society 63, 2314–2318 (2013).

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  • Ga oxide
  • GaN
  • Photoelectrochemical oxidation
  • X-ray photoemission spectroscopy