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The effect of hydrogen on the electric properties of amorphous InGaZnO with varying Zn content

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Abstract

Amorphous InGaZnO thin films fabricated with various compositions by using the sol-gel method and a spin-coating process show electric properties close to those of an insulator, regardless of the Zn content. However, their conductive properties change after hydrogen treatment, with a high carrier concentration being typical for high Zn content. The poor transmittance and the enhanced electric conductivity after hydrogen treatment is most likely related to the formation of oxygen vacancies. We found that after hydrogen treatment, a change in the Zn content caused changes in the carrier density and the resistivity by factors of 100. Because the change in the Zn content did not influence the properties before hydrogen treatment, we concluded that the carrier density enhancement after hydrogen treatment was due to hydrogen-induced electrons causing enhanced Zn-O coupling rather than to the formation of oxygen vacancies.

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Authors and Affiliations

  1. Department of Cogno-Mechatronics Engineering, Pusan National University, Miryang, 627-706, Korea

    Won-Kyung Kim, Ji-Eun Jeong, Ji Hun Park, Yong Chan Cho, Seunghun Lee & Se-Young Jeong

  2. Department of Nanofusion Technology, Pusan National University, Miryang, 627-706, Korea

    Chae-Ryong Cho

  3. Busan Center, Korea Basic Science Institute, Busan, 618-230, Korea

    Jong-Seong Bae

Authors
  1. Won-Kyung Kim
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  2. Ji-Eun Jeong
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  3. Ji Hun Park
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  4. Yong Chan Cho
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  5. Seunghun Lee
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  6. Se-Young Jeong
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  7. Chae-Ryong Cho
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Correspondence to Seunghun Lee.

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Kim, WK., Jeong, JE., Park, J.H. et al. The effect of hydrogen on the electric properties of amorphous InGaZnO with varying Zn content. Journal of the Korean Physical Society 63, 209–213 (2013). https://doi.org/10.3938/jkps.63.209

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  • DOI: https://doi.org/10.3938/jkps.63.209

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