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Analysis of interface states and series resistance in Ag/m-plane ZnO Schottky diodes

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Abstract

The effect of interfaces states on the electrical properties in Ag/m-plane ZnO Schottky contacts was investigated using both current-voltage (I–V) and capacitance-voltage (C–V) measurements. The measured C–V characteristics showed strong dependences on the bias voltage and frequency. The interface state densities from the I–V characteristics were found to vary from 1.72 × 1013 eV−1cm−2 at E C -0.32 eV to 1.68 × 1012 eV−1cm−2 at E C -0.54 eV. The interface state densities from the conductance-frequency (G/ω - f) characteristics also were within this range. The series resistance vs. voltage (R S - V) plot showed a peak in the small forward bias region (0 ∼ 0.5 V), which was attributed to the contribution of interface states to the series resistance.

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References

  1. Ü. Özgür, Y. Alivov, C. Liu, A. Teke, M. Reshchikov, S. Doǧan, V. Avrutin, S. Cho and H. Morkoç, J. App. Phys. 98, 041301 (2005).

    Article  ADS  Google Scholar 

  2. D. Reynolds, D. Look and B. Jogai, Solid-State Comm. 99, 873 (1996).

    Article  ADS  Google Scholar 

  3. E. Ohshima, H. Ogino, I. Niikura, K. Maeda, M. Sato, M. Ito and T. Fukuda, J. Cryst. Growth 260, 166 (2004).

    Article  ADS  Google Scholar 

  4. L. Brillson and Y. Lu, J. Appl. Phys. 109, 121301 (2011).

    Article  ADS  Google Scholar 

  5. V. Avrutin, G. Cantwell, J. Zhang, J. Song, D. Silversmith and H. Morkoç, Proc. IEEE 98, 1339 (2010).

    Article  Google Scholar 

  6. J. Nause and B. Nemeth, Semicond. Sci. Technol. 20, S45 (2005).

    Article  ADS  Google Scholar 

  7. A. Lajn, H. Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Wickert, C. Vogt and R. Denecke, J. Vac. Sci. Technol. B 27, 1769 (2009).

    Article  Google Scholar 

  8. M. Allen, S. Durbin and J. Metson, Appl. Phys. Lett. 91, 053512 (2007).

    Article  ADS  Google Scholar 

  9. V. Kolkovsky, L. Scheffler, E. Hieckmann, E. Lavrov and J. Weber, Appl. Phys. Lett. 98, 082104 (2011).

    Article  ADS  Google Scholar 

  10. C. Chen, A. Vdivarahan, J. Yang, M. Shatalov, E. Kuokstis and M. Khan, Jpn. J. Appl. Phys. 42, L1039 (2003).

    Article  ADS  Google Scholar 

  11. K. Matocha, V. Tilak and G. Dunne, Appl. Phys. Lett. 90, 123511 (2007).

    Article  ADS  Google Scholar 

  12. Ş. Aydoǧan, K. Çınar, H. Asıl, C. Coşkun and A. Türüt, J. Alloys Compd. 476, 913 (2009).

    Article  Google Scholar 

  13. F. Yakuphanoglu, J. Alloys Compd. 507, 184 (2010).

    Article  Google Scholar 

  14. S. Faraz, M. Willander and Q. Wahab, IOP Conf. Ser.: Mater. Sci. Eng. 34, 012006 (2012).

    Google Scholar 

  15. I. Hussain, M. Soomro, N. Bano, O. Nur and M. Willander, J. Appl. Phys. 112, 064506 (2012).

    Article  ADS  Google Scholar 

  16. S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).

    Google Scholar 

  17. H. Card and E. Rhoderick, J. Phys. D: Appl. Phys. 4, 1589 (1971).

    Article  ADS  Google Scholar 

  18. E. Rhoderick and R. Williams, Metal Semiconductor Contacts (Clarendon, Oxford, 1988).

    Google Scholar 

  19. S. Witczak, J. Suehle and M. Gaitan, Solid-State Electron. 35, 345 (1992).

    Article  ADS  Google Scholar 

  20. E. Nicollian and A. Goetzberger, Bell System Tech. 46, 1055 (1967).

    Article  Google Scholar 

  21. Ş. Karataş and A. Türüt, Vacuum 74, 45 (2004).

    Article  Google Scholar 

  22. E. Nicollian and J. Brews, MOS Physics and Technology (John Wiley & Sons, New York, 1982).

    Google Scholar 

  23. M. Bülbül, S. Bengi, İ. Dökme, Ş. Altındal and T. Tunç, J. Appl. Phys. 108, 034517 (2010).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Department of Optometry, Seoul National University of Science and Technology (Seoultech), Seoul, 139-743, Korea

    Hogyoung Kim

  2. Department of Physics, Ewha Womans University, Seoul, 120-750, Korea

    Haeri Kim & Dong-Wook Kim

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  1. Hogyoung Kim
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  2. Haeri Kim
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  3. Dong-Wook Kim
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Correspondence to Hogyoung Kim.

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Kim, H., Kim, H. & Kim, DW. Analysis of interface states and series resistance in Ag/m-plane ZnO Schottky diodes. Journal of the Korean Physical Society 63, 2034–2038 (2013). https://doi.org/10.3938/jkps.63.2034

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  • DOI: https://doi.org/10.3938/jkps.63.2034

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