Abstract
In this work, we performed an extensive experimental study on temperature dependence of the piezoresistive behavior of silicon. For the precise measurement of stress, we derived the expressions for the relationship between the pi-coefficients versus temperature. Also, the relationship was observed to be in good agreement with the calibration results over the temperature range -133 to 100 °C for test chips fabricated on the (111) silicon surface.
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Cho, CH. The relationship between the Pi-coefficient and the temperature for the (111) silicon surface. Journal of the Korean Physical Society 63, 2029–2033 (2013). https://doi.org/10.3938/jkps.63.2029
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DOI: https://doi.org/10.3938/jkps.63.2029