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InGaN-based resonant-cavity light-emitting diodes with dielectric-distributed Bragg reflectors

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Abstract

An InGaN-based resonant-cavity light-emitting diode (RC-LED) chip with a large chip area of 1 × 1 mm2 was fabricated using ZrO2/SiO2 dielectric-distributed Bragg reflectors (DBRs) on both sides of the cavity. After the growth of InGaN-based n- and p-epitaxial layers on a sapphire substrate, ZrO2/SiO2 layers for one DBR were deposited on it; then, holes with ∼10-µm diameters were patterned through the DBR layers. The DBR layer’s side of the whole sample was thermally bonded to a silicon substrate by using Au bonding metal; then, the sapphire substrate of the sample was removed using a laser lift-off technique. ZrO2/SiO2 layers for the other DBR were deposited on n-GaN for complete formation of the cavity. Through the electrical and the optical characterizations, we showed that our RC-LED has the improved optical output power and forward directionality in comparison with a conventional LED.

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Authors and Affiliations

  1. Department of Photonic Engineering, Chosun University, Gwangju, 501-759, Korea

    Jae-Hun Kim

  2. Department of Electronic Engineering, Yeungnam University, Gyeongbuk, 712-749, Korea

    Si-Hyun Park

Authors
  1. Jae-Hun Kim
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  2. Si-Hyun Park
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Correspondence to Si-Hyun Park.

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Kim, JH., Park, SH. InGaN-based resonant-cavity light-emitting diodes with dielectric-distributed Bragg reflectors. Journal of the Korean Physical Society 63, 2008–2011 (2013). https://doi.org/10.3938/jkps.63.2008

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  • DOI: https://doi.org/10.3938/jkps.63.2008

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