Abstract
We studied the effects of the annealing process on domain-wall contributions to the dielectric properties of PZT thin films. Two annealing processes, single annealing and layer-by-layer annealing, were used to fabricate PZT thin films. The film thickness was controlled by repeating the spin-coating process. Field-emission scanning electron microscopy and an X-ray diffraction analysis showed the morphological and the structural differences, respectively, between the two films. Based on the analysis of ferroelectric hysteresis loops, we found that PZT thin films fabricated with the single annealing process had larger values of the remanent polarization (P r ) and the coercive field (E c ) than PZT thin films fabricated with the layer-by-layer annealing process. The values for the P r and the E c in the two films differed by, at most, 9 µC/cm2 and 23 kV/cm. This maximum difference occurred between films that underwent the same number of spin-coating cycles. Using Rayleigh relations, we could explain the differences in ferroelectric properties in terms of domain-wall motion contributions to the dielectric properties.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. Yang, X. J. Meng, M. R. Shen, J. L. Sun, and J. H. Chu, J. Appl. Phys. 106, 094108 (2009).
J. Pérez de la Cruz, E. Joanni, P. M. Vilarinho, and A. L. Kholkin, J. Appl. Phys. 108, 11410 (2010).
D. V. Taylor and D. Damjanovic, Appl. Phys. Lett. 76, 1615 (2000).
J. H. Kwak, J. K. Han, S. Y. Cho, and S. D. Bu, J. Korean Phys. Soc. 60, 216 (2012).
S. A. Yang, J. K. Han, Y. C. Choi, and S. D. Bu, J. Korean Phys. Soc. 58, 668 (2011).
M. Dekkers, M. D. Nguyen, R. Steenwelle, P. M. te Riele, Dave H. A. Blank, and Guus Rijnders, Appl. Phys. Lett. 95, 012902 (2009).
P. jegatheesan, H. K. Yadav, V. Gupta, and N. V. Giridharan, Mater. Lett. 65, 901 (2011).
K. Ujimoto, T. Yoshimura, A. Ashida, and N. Fujimura, Appl. Phys. Lett. 100, 102901 (2012).
S. Huo, S. Yusan, Z. Tian, C. Wang, and Y. Qiu, J. Am. Cram. Soc. 75, 1383 (2012).
T. Kobayashi, M. Ichiki, J. Tsaur, and R. Maeda, Thin Solid Films 489, 74 (2005).
J. Chen, K. R Udayakumar, K. G. Brooks, and L. E. Cross, J. Appl. Phys. 71, 4465 (1992).
M. H. Zhao, R. Fu, D. Lu, and T. Y. Zhang, Acta Mater. 50, 4241 (2002).
Q. M. Zhang, H. Wang, N. Kim, and L. E. Cross, J. Appl. Phys. 75, 454 (1994).
N. Bassiri-Gharb, I. Fujii, E. Hong, S. Trolier-McKinstry, D. V. Taylor, and D. Damjanovic, J. Electroceram. 19, 47 (2007).
J. F. Ihlefeld and C. T. Shelton, Appl. Phys. Lett. 101, 052902 (2012).
W. Zhu, I. Fujii, W. Ren, and S. Trolier-McKinstry, J. Am. Ceram. Soc. 95, 2906 (2012).
J. Kim, S. A. Yang, Y. C. Choi, J. K. Han, K. O. Jeong, Y. J. Yun, D, J. Kim, S. M. Yang, D. H. Yoon, H. S. Cheong, K. S. Chang, T. W. Noh, and S. D. Bu, Nano Lett. 8, 1813 (2008).
S. A. Yang, S. Y. Cho, J. S. Lim, and S. D. Bu, Thin Solid Films 520, 7071 (2012).
S. H. Hu, X. J. Meng, G. S. Wang, J. L. Sun, and D. X. Li, J. Cryst. Growth 264, 307 (2004).
M. B. Gharb and S. Trolier-McKinstry, J. Appl. Phys. 97, 064106 (2005).
J. H. Park, S. H. Yoon, D. Shen, S. Y. Choe, Y. S. Yoon, M. Park, and D. J. Kim, J. Mater. Sci. — Mater. Electron. 20, 366 (2009).
J. F. Ihlefeld, A. M. Vodnivk, S. P. Baker, W. J. Borland, and J. P. Maria, J. Appl. Phys. 103, 074112 (2008).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Cho, S.Y., Kwak, J.H., Yang, S.A. et al. Effects of annealing on domain-wall contributions to the dielectric properties of PZT thin films. Journal of the Korean Physical Society 63, 2002–2007 (2013). https://doi.org/10.3938/jkps.63.2002
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.63.2002