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Dopant profile model in a shallow germanium n+/p junction

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Abstract

A challenging issue is to estimate the n-type dopant profiles and, consequently, their diffusivities in shallow Ge n+/p junctions because of their abnormal dopant profiles that do not follow conventional Gaussian-distribution-based diffusion theory. In order to fit the abnormal dopant profiles in shallow junctions, what are due to (1) fast and asymmetric diffusion of n-type dopants and (2) dopant pileup caused by surface back-scattering phenomenon, we propose a new profiling function and verify it by using a fitting algorithm based on the least-squares method. Through this fitting algorithm, we estimate the diffusivity and peak-position values from the raw dopant profile data, and we provide the experimental diffusivity equations as a function of the annealing temperature.

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Authors and Affiliations

  1. School of Mechanical & Aerospace Engineering, Nanyang Technological University, 639798, Nanyang, Singapore

    Jung Woo Baek

  2. Samsung-SKKU Graphene Center and School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, Korea

    Jaewoo Shim & Jin-Hong Park

  3. Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA

    Woo-Shik Jung

  4. School of Electrical Engineering, Korea University, Seoul, 136-701, Korea

    Hyun-Yong Yu

Authors
  1. Jung Woo Baek
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  2. Jaewoo Shim
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  3. Jin-Hong Park
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  4. Woo-Shik Jung
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  5. Hyun-Yong Yu
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Corresponding author

Correspondence to Jin-Hong Park.

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Baek, J.W., Shim, J., Park, JH. et al. Dopant profile model in a shallow germanium n+/p junction. Journal of the Korean Physical Society 63, 1855–1858 (2013). https://doi.org/10.3938/jkps.63.1855

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  • DOI: https://doi.org/10.3938/jkps.63.1855

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