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Correlation between reverse characteristics and structural defects in 4H-SiC PiN diode

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Abstract

We fabricated 4H-SiC PiN diodes to analyze the correlation between the reverse characteristics, including current-voltage and failure characteristics, and defects. The leakage current and electroluminescense (EL) were measured at prebreakdown voltages. The diodes were etched by using molten KOH, and the locations of etch pits were compared with those of hot spots emitting during the EL measurements. The results showed that the reverse leakage current of a diode having defects in the p− junction termination extension (JTE) was at most 26 times higher than that of a diode having defects in an active area. The breakdown voltages of the diodes with threading screw dislocations (TSDs) and threading edge dislocations (TEDs) were reduced by 15.5% and 6.5%, compared with those of a diode without defects. In addition, the diodes were found to be destroyed due to weak edge termination resulting from misalignment and large pits.

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References

  1. J. C. Zolper and M. Skowronski, MRS Bull. 30, 273 (2005).

    Article  Google Scholar 

  2. R. A. Berechman, M. Skowronski, S. Soloviev and P. Sandvik, J. Appl. Phys. 107, 114504 (2010).

    Article  ADS  Google Scholar 

  3. R. A. Berechman, M. Skowronski and Q. Zhang, J. Appl. Phys. 105, 074513 (2009).

    Article  ADS  Google Scholar 

  4. P. N. Neudeck, Mater. Sci. Forum 338-342, 1161 (2000).

    Article  Google Scholar 

  5. Y. Wang, G. N. Ali, M. K. Mikhov, V. Vaidyanathan, B. J. Skromme, B. Raghothamachar and M. Duley, J. Appl. Phys. 97, 013540 (2005).

    Article  ADS  Google Scholar 

  6. V. F. Tsvetkov, R. C. Glass, D. Henshall, D. A. Asbury and C. H. Carter Jr., SiC seeded Boule Growth, in Materials Science Forum-Silicon Carbide, III-Nitides and Related Materials, edited by G. Pensl, H. Morkoc, B. Monemar and E. Jonsen (Trans Tech, Switzerland, 1998), Vol. 483, p. 3.

    Google Scholar 

  7. B. Kallinger, B. Thomas and J. Friedrich, Mater. Sci. Forum 600–603, 143 (2008).

    Google Scholar 

  8. P. G. Neudeck, W. Huang and M. Dudley, Solid-State Electron 42, 2157 (1998).

    Article  ADS  Google Scholar 

  9. M. K. Das, J. J. Sumakeris, B. A. Hull, J. Richmond, S. Kishnoswami and A. R. Powell, Mater. Sci. Forum 483–485, 965 (2005).

    Article  Google Scholar 

  10. D. Peters, W. Bartsch, B. Thomas and R. Sommer, Mater. Sci. Forum 645–648, 901 (2009).

    Google Scholar 

  11. K. Vasilevskiy, I. P. Nikitina, A. B. Horsfall, N. G. Wright and C. M. Johnson, Mater. Sci. Forum 679–680, 555 (2010).

    Google Scholar 

  12. G. K. Reeves and H. B. Harrison, IEEE Electron Dev. Lett. EDL-3, 111 (1982).

    Article  Google Scholar 

  13. G. L. Pearson, W. T. Read and F. J. Morin, Phys. Rev. 93, 666 (1954).

    Article  ADS  Google Scholar 

Download references

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Authors and Affiliations

  1. Power Ssemiconductor Research Center, Korea Electrotechnology Research Institute, Changwon, 642-120, Korea

    Seung Bok Yun, Wook Bahng & In-Ho Kang

  2. LMGP, Grenoble, 38016, France

    Yun Ji Shin

  3. Department of Electrical Engineering, Kyungnam University, Changwon, 631-701, Korea

    Sang Bo Han

Authors
  1. Seung Bok Yun
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  2. Wook Bahng
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  3. In-Ho Kang
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  4. Yun Ji Shin
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  5. Sang Bo Han
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Correspondence to In-Ho Kang.

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Yun, S.B., Bahng, W., Kang, IH. et al. Correlation between reverse characteristics and structural defects in 4H-SiC PiN diode. Journal of the Korean Physical Society 63, 1819–1823 (2013). https://doi.org/10.3938/jkps.63.1819

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