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Enhanced optical and electrical properties of boron-doped zinc-oxide thin films prepared by using the sol-gel dip-coating method

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Abstract

Undoped ZnO and B-dopoed ZnO (BZO) thin films with 0 to 2.5 at.% B were prepared by using sol-gel synthesis. Their optical and electrical properties and surface morphology were investigated using scanning electron microscopy, photoluminescence (PL), and van der Pauw Hall-effect measurements. All of the thin films were deposited appropriately onto quartz substrates; they exhibited a fibrous root morphology, with structures that changed in size with increasing B concentration. The PL spectra showed near-band-edge (NBE) emissions and deep-level emissions (DLE). The NBE emission and the DLE for the BZO thin films were more blue-shifted than those for the undoped ZnO thin film, and the blue shift increased the efficiency of the NBE emission of the BZO thin films. The Hall-effect data suggested that B doping also improved the electrical properties, such as the carrier concentration, Hall mobility, and resistivity, of the thin films. The resistivity and the Hall mobility decreased with increasing B concentration and were inversely proportional to the carrier concentration.

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Authors and Affiliations

  1. School of Chemical Engineering, Yeungnam University, Gyeongsan, 712-749, Korea

    Sang-heon Lee, MinSu Kim, YuJin Jung & Jae Hak Jung

  2. Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, 621-749, Korea

    Soaram Kim & Jae-Young Leem

  3. R&D Center, Sejin Digital Communication Co., Ltd, Gumi, 730-803, Korea

    Howoon Kim

Authors
  1. Sang-heon Lee
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  2. MinSu Kim
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  3. YuJin Jung
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  4. Jae Hak Jung
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  5. Soaram Kim
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  6. Jae-Young Leem
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  7. Howoon Kim
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Correspondence to Jae Hak Jung or Jae-Young Leem.

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Lee, Sh., Kim, M., Jung, Y. et al. Enhanced optical and electrical properties of boron-doped zinc-oxide thin films prepared by using the sol-gel dip-coating method. Journal of the Korean Physical Society 63, 1804–1808 (2013). https://doi.org/10.3938/jkps.63.1804

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  • DOI: https://doi.org/10.3938/jkps.63.1804

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