Abstract
To produce more efficient power semiconductors by reducing the switch loss, we studied heliumion implantation instead of gold diffusion and electron irradiation. The 3-MeV energy and 0.1-mA current for about a 10 × 1014 ions/cm2 dose is required for silicon wafers of ten inches in diameter. A radio-frequency quadrupole (RFQ) can be a good accelerator to meet the above requirements. We designed a four-vane type 200-MHz RFQ for this purpose. A 25-keV/u He++ beam with a 10-mA peak current was extracted from an ion source and was matched to the RFQ by using electrostatic lenses. The RFQ is designed to accelerate He++ ions (A/q = 2) up to 750 keV/u. A 200-kW tetrode RF amplifier drives the RFQ with a duty factor of 1%. After the RFQ, a beam wobbling system and a beam transport system are required to irradiate the beam onto large silicon wafers. This work summarizes the detailed design of the irradiation system.
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References
K. R. Crandall, T. P. Wangler, L. M. Young, J. H. Billen, G. H. Neuschaefer and D. L. Schrage, RFQ Design Codes, LA-UR-96-1836.
K. T. Seol, H. J. Kwon, H. S. Kim, Y. G. Song and Y. S. Cho, J. Korean Phys. Soc. 59, 627 (2011).
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Cho, YS. Design of a 200-MHz RFQ for 3-MeV He++ beam irradiation. Journal of the Korean Physical Society 63, 1327–1331 (2013). https://doi.org/10.3938/jkps.63.1327
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DOI: https://doi.org/10.3938/jkps.63.1327