Abstract
Hydrogenated amorphous carbon (a-C:H) films were deposited on soda-lime glass substrates by using a DC facing target sputtering system. The effects of the CH4 gas and the substrate temperature on the deposition rate and the properties of the film were investigated. We found that the deposition rate of the film grown under an Ar-CH4 plasma was about three times larger than that of the film grown under an Ar plasma. The CH4 gas played a role as an additional carbon precursor to increase the deposition rate, which could be seen as a CH* peak at 431 nm in the optical emission spectra of the Ar-CH4 plasma. The sp 3 fraction in the film increased gradually from 32 to 37% as the substrate temperature was increased from 100 °C to 400 °C. The optical band-gap energy of the a-C:H films varied from 3.9 to 3.98 eV, and this variation was closely related to changes in the sp3 fraction. Overall, these results indicate that the addition of CH4 gas to a-C:H film deposition enhanced the deposition rate by changing the deposition mechanism from physical to reactive.
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References
J. Robertson, Mater. Sci. Eng. R 37, 129 (2002).
J. Robertson, Surf. Coat. Technol. 50, 185 (1992).
P. K. Chu and L. Li, Mater. Chem. Phys. 96, 253 (2006).
H. T. Kim and S. H. Sohn, Vacuum 86, 2148 (2012).
Y. Miyajima, S. J. Henley, G. Adamopoulos, V. Stolojan, E. Garcia-Caurel, B. Drévillon, J. M. Shannon and S. R. P. Silva, J. Appl. Phys. 105, 073521 (2009).
F. C. Marques and R. G. Lacerda, Braz. J. Phys. 30, 527 (2000).
H. P. Wang and J. Lin, Surf. Coat. Technol. 204, 2246 (2010).
S. Sivaram, Chemical Vapor Deposition: Thermal and Plasma Deposition of Electronic Materials (Van Nostrand Reinhold, New York, 1995).
F. C. Marques, R. G. Lacerda, A. Chapi, V. Stolojan, D. C. Cox and S. R. P. Silva, Appl. Phys. Lett. 83, 3099 (2003).
J. P. Sullivan, T. A. Friedmann and A. G. Baca, J. Electronic Mater. 26, 1021 (1997).
S. M. Rossnagel, J. J. Cuomo and W. D. Westwood, Handbook of Plasma Processing Technology: Fundamentals, Etching, Deposition, and Surface Interactions (Noyes Publications, Park Ridge, 1990).
H. T. Kim, J. Y. Park and C. H. Park, Korean J. Chem. Eng. 29, 676 (2012).
J. R. Shi, Y. J. Xu and J. Zhang, Surf. Coat. Technol. 198, 437 (2005).
J. R. Shi and J. P. Wang, Thin Solid Films 420, 172 (2002).
S. S. Nathan, G. K. Muralidhar, G. M. Rao and S. Mohan, Thin Solid Films 292, 20 (1997).
M. Ohring, Materials Science of Thin Films (Academic Press, San Diego, 2002).
K. A. Jackson, Kinetic Process: Crystal Growth, Diffusion, and Phase Transitions in Materials (Wiley-VCH, Weinheim, 2004).
NIST, Atomic Spectra Database Lines Data at http://www.nist.gov.
H. T. Kim, D. K. Park and W. S. Choi, J. Korean Phys. Soc. 42, S916 (2003).
A. V. Eletskii and B. M. Smirnov, Phys. Usp. 39, 1137 (1996).
S. V. Avtaeva and T. M. Lapochkina, Plasma Phys. Rep. 33, 774 (2007).
A. C. Ferrari and J. Robertson, Phys. Rev. B 61, 14095 (2000).
J. Schwan, S. Ulrich, V. Batori, H. Ehrhardt and S. R. P. Silva, J. Appl. Phys. 80, 440 (1996).
J. E. Castle, H. Chapman-Kpodo, A. Proctor and A. M. Salvi, J. Electron. Spectrrosc. Relat. Phenom. 106, 65 (2000).
J. Tauc, R. Grigorovici and A. Vancu, Phys. Status Solidi 15, 627 (1966).
J. Mort and F. Jansen, Plasma Deposited Thin Films (CRC Press Inc., Boca Raton, 1986).
B. Dishler, A. Bubenzer and O. Koidl, Solid State Commun. 48, 105 (1983).
C. Oppedisano and A. Tagliaferro, Appl. Phys. Lett. 75, 3650 (1999).
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Bhak, J., Kim, C., Rhee, I. et al. Effects of CH4 gas and substrate temperature on hydrogenated amorphous carbon (a-C:H) films fabricated using DC facing target sputtering. Journal of the Korean Physical Society 62, 258–262 (2013). https://doi.org/10.3938/jkps.62.258
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DOI: https://doi.org/10.3938/jkps.62.258