Skip to main content
SpringerLink
Log in

Effect of oxygen pressure on electrical properties of Ge-doped ZnO thin films grown by using pulsed laser deposition

  • Published:
Journal of the Korean Physical Society Aims and scope Submit manuscript

Abstract

ZnO and Ge-doped ZnO (GZO) thin films were fabricated on c-Al2O3 substrates at various oxygen pressures (10, 50, 100, 200, and 400 mTorr) and at 300 °C by using a pulsed laser deposition method. The transmittances of the films were measured by using ultraviolet-visible spectroscopy. The absorption of the band gap edge was calculated by using Tauc’s equation. The films showed n-type conduction characteristics. Compared to the other films, the film deposited at 10 mTorr compared showed improved electrical properties. The carrier concentration and the resistivity of the GZO film were 1021 cm−3 and 6.5 × 10−4 Ωcm, respectively.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. T. Minami, Semicond. Sci. Technol. 20, S35 (2005).

    Article  ADS  Google Scholar 

  2. A. Yamamoto, T. Kido, T. Goto, Y. Chen, T. Yao and A. Kasuya, Appl. Phys. Lett. 75, 469 (1999).

    Article  ADS  Google Scholar 

  3. K. Nakahara, H. Takasu, P. Fons, A. Yamoda, K. Iwata, K. Matsubara, R. Hunger and S. Niki, Appl. Phys. Lett. 79, 4139 (2001).

    Article  ADS  Google Scholar 

  4. V. Bhosle, A. Tiwari and J. Narayan, J. Appl. Phys. 100, 033713 (2006).

    Article  ADS  Google Scholar 

  5. Y. M. Kim, W. J. Lee, D.-R. Jung, J. G. Kim, S. H. Nam, H. C. Kim and B. W. Park, Appl. Phys. Lett. 96, 171902 (2010).

    Article  ADS  Google Scholar 

  6. P. Banerjee, W.-J. Lee, K.-R. Bae, S. B. Lee and G. W. Rubloff, J. Appl. Phys. 108, 043504 (2010).

    Article  ADS  Google Scholar 

  7. B.-T. Lee, T.-H. Kim and S.-H. Jeong, J. Phys. D: Appl. Phys. 39, 957 (2006).

    Article  ADS  Google Scholar 

  8. D.-H. Kim, S.-H. Lee, G.-H. Lee, H.-B. Kim, K. H. Kim, Y.-G. Lee and T.-H. Yu, J. Appl. Phys. 108, 023520 (2010).

    Article  ADS  Google Scholar 

  9. Y. S. Yu, G. T. Kim, B. H. Min and S. C. Kim, J. Eur. Ceram. Soc. 24, 1865 (2004).

    Article  Google Scholar 

  10. M. Jiang, Z. Wang and Z. Ning, Thin Solid Films 517, 6717 (2009).

    Article  ADS  Google Scholar 

  11. D. H. Fan, Z. Y. Ning and M. F. Jiang, Appl. Surf. Sci. 245, 414 (2005).

    Article  ADS  Google Scholar 

  12. R. D. Shannon, Acta Crystallogr., Sect. A: Found. Crystallogr. 32, 751 (1976).

    Article  ADS  Google Scholar 

  13. J. L. Lyons, A. Janotti and C. G. van de Walle, Phys. Rev. B 80, 205113 (2009).

    Article  ADS  Google Scholar 

  14. A. Janotti and C. G. van de Walle, Phys. Rev. B 76, 165202 (2007).

    Article  ADS  Google Scholar 

  15. S.-M. Park, T. Ikegami, K. Ebihara and P.-K. Shin, Appl. Surf. Sci. 253, 1522 (2006).

    Article  ADS  Google Scholar 

  16. L. M. Wong, S. Y. Chiam, J. Q. Huang, S. J. Wang, J. S. Pan and W. K. Chim, Appl. Phys. Lett. 98, 022106 (2011).

    Article  ADS  Google Scholar 

  17. S.-H. Jeong, B.-S. Kim and B. T. Lee, Appl. Phys. Lett. 82, 2625 (2003).

    Article  ADS  Google Scholar 

  18. M. Y. Nadeem and W. Ahmed, Turk. J. Phys. 24, 651 (2000).

    Google Scholar 

  19. E. Burstein, Phys. Rev. 93, 632 (1954).

    Article  ADS  Google Scholar 

  20. J. G. Lu et al., J. Appl. Phys. 101, 083705 (2007).

    Article  ADS  Google Scholar 

  21. N. F. Mott, Philos. Mag. 6, 287 (1961).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. School of Nano and Advanced Materials Engineering, Changwon National University, Changwon, 641-773, Korea

    D. J. Kim, M. H. Lee, J. S. Park, D. Do, W. Lee, M. H. Kim & T. K. Song

  2. Department of Physics, Changwon National University, Changwon, 641-773, Korea

    H. I. Choi, K. W. Jang & W. J. Kim

Authors
  1. D. J. Kim
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. H. Lee
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. J. S. Park
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. D. Do
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. W. Lee
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. M. H. Kim
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. T. K. Song
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. H. I. Choi
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. K. W. Jang
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. W. J. Kim
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding authors

Correspondence to T. K. Song or W. J. Kim.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kim, D.J., Lee, M.H., Park, J.S. et al. Effect of oxygen pressure on electrical properties of Ge-doped ZnO thin films grown by using pulsed laser deposition. Journal of the Korean Physical Society 61, 920–923 (2012). https://doi.org/10.3938/jkps.61.920

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.3938/jkps.61.920

Keywords

Search

Navigation