Journal of the Korean Physical Society

, Volume 61, Issue 3, pp 410–414 | Cite as

Comparison of simulation models for the coaxially-gated carbon-nanotube field-effect transistor

  • Jong-Myeon Park
  • Jae-Hong An
  • Shin-Nam Hong
Research Papers


Carbon-nanotube field-effect transistors (CNFETs) have received great attention as possible successors to metal-oxide-semiconductor field-effect transistors (MOSFETs) beyond the sub-10 nm era. In this work, numerical simulations were performed on single-walled semiconducting CNFETs using a FETToy simulator and a compact model with or without a smoothing parameter. The discontinuity in the derivative of the surface potential with respect to V GS in the compact model can be remedied by employing a simple smoothing parameter. The simulated output characteristics of CNFETs with a 1.5-nm-thickgate insulator and a 3-nm-diameter nanotube channel exhibited the advantage of using a smoothing parameter. Our results show fairly good matches between the FETToy model and the compact model with a smoothing parameter of less than 5 × 10−4.


Carbon nanotube CNFET FETToy Compact model Smoothing parameter 


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  1. [1]
    S. Iijima, Nature 354, 56 (1991).ADSCrossRefGoogle Scholar
  2. [2]
    J. Guo, M. Lundstrom and S. Datta, Appl. Phys. Lett. 80, 3192 (2002).ADSCrossRefGoogle Scholar
  3. [3]
    S. N. Hong and J. M. Park, J. Korean Phys. Soc. 56, 1497 (2010).ADSCrossRefGoogle Scholar
  4. [4]
    H. S. Park, S. G. Kim, J. D. Kim, J. G. Koo, Y. S. Yang, K. H. Lee and J. H. Lee, J. Korean Phys. Soc. 57, 802 (2010).ADSCrossRefGoogle Scholar
  5. [5]
    A. Raychowdhury, S. Mukhopadhyay and K. Roy, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 23, 1415 (2004).CrossRefGoogle Scholar
  6. [6]
    A. Aouaj, A. Bouziane and A. Nouacry, in International Conference on Multimedia Computing and Systems, ICMCS’ 09 (Ouarzazate, Morocco, April 2–4, 2009).Google Scholar
  7. [7]
    J. W. Mintmire and C. T. White, Phys. Rev. Lett. 81, 2506 (1998).ADSCrossRefGoogle Scholar
  8. [8]
    F. Pregaldiny, C. Lallement and J. B. Kammerer, in Proceedings of the Conference on Design & Test of Integrated Systems in Nanoscale Technology (DTIS) (Tunis, Tunisia, September 5–7, 2006).Google Scholar
  9. [9]
    I. O’Connor, J. Liu, F. Gaffiot, F. Prégaldiny, C. Lallement, C. Maneux, J. Goguet, S. Frégonèse, T. Zimmer, L. Anghel, T. T. Dang and R. Leveugle, IEEE Trans. Circuits Syst. Regul. Pap. 54, 365 (2007).Google Scholar
  10. [10]
    A. Raychowdhury, S. Mukhopadhyay and K. Roy, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12, 1411 (2004).CrossRefGoogle Scholar
  11. [11]
    Nanohub on line simulation and more (on line), available at

Copyright information

© The Korean Physical Society 2012

Authors and Affiliations

  1. 1.School of Electronics, Telecommunication and Computer EngineeringKorea Aerospace UniversityGoyangKorea

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