Comparison of simulation models for the coaxially-gated carbon-nanotube field-effect transistor
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Carbon-nanotube field-effect transistors (CNFETs) have received great attention as possible successors to metal-oxide-semiconductor field-effect transistors (MOSFETs) beyond the sub-10 nm era. In this work, numerical simulations were performed on single-walled semiconducting CNFETs using a FETToy simulator and a compact model with or without a smoothing parameter. The discontinuity in the derivative of the surface potential with respect to VGS in the compact model can be remedied by employing a simple smoothing parameter. The simulated output characteristics of CNFETs with a 1.5-nm-thickgate insulator and a 3-nm-diameter nanotube channel exhibited the advantage of using a smoothing parameter. Our results show fairly good matches between the FETToy model and the compact model with a smoothing parameter of less than 5 × 10−4.
KeywordsCarbon nanotube CNFET FETToy Compact model Smoothing parameter
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- A. Aouaj, A. Bouziane and A. Nouacry, in International Conference on Multimedia Computing and Systems, ICMCS’ 09 (Ouarzazate, Morocco, April 2–4, 2009).Google Scholar
- F. Pregaldiny, C. Lallement and J. B. Kammerer, in Proceedings of the Conference on Design & Test of Integrated Systems in Nanoscale Technology (DTIS) (Tunis, Tunisia, September 5–7, 2006).Google Scholar
- I. O’Connor, J. Liu, F. Gaffiot, F. Prégaldiny, C. Lallement, C. Maneux, J. Goguet, S. Frégonèse, T. Zimmer, L. Anghel, T. T. Dang and R. Leveugle, IEEE Trans. Circuits Syst. Regul. Pap. 54, 365 (2007).Google Scholar
- Nanohub on line simulation and more (on line), available at http://www.nanohub.org.