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Exciton dynamics in organic light-emitting diodes

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Abstract

In this paper, we present a numerical simulation for the optoelectronic material and device characterization in organic light-emitting diodes (OLEDs). Our model includes a Gaussian density of states to account for the energetic disorder in the organic semiconductors and the Fermi-Dirac statistics to account for the charge-hopping process between uncorrelated sites. The motivation for this work is the extraction of the emission profile and the source spectrum of a given OLED structure. The physical model covers all the key physical processes in OLEDs: namely, charge injection, transport and recombination, exciton diffusion, transfer, and decay. The exciton model includes generation, diffusion, energy transfer, and annihilation. We assume that the light emission originates from an oscillation and is thus embodied as excitons and is embedded in a stack of multilayers. The outcoupled emission spectrum is numerically calculated as a function of viewing angle, polarization, and dipole orientation. We also present simulated current-voltage and transient results.

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Authors and Affiliations

  1. Department of Electrical Engineering, Inha University, Incheon, 402-751, Korea

    Kwangsik Kim & Taeyoung Won

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  1. Kwangsik Kim
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  2. Taeyoung Won
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Correspondence to Taeyoung Won.

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Kim, K., Won, T. Exciton dynamics in organic light-emitting diodes. Journal of the Korean Physical Society 61, 1523–1527 (2012). https://doi.org/10.3938/jkps.61.1523

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  • DOI: https://doi.org/10.3938/jkps.61.1523

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