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High-power InAs quantum-dot superluminescent diodes with offset J-shaped waveguides

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Abstract

We demonstrate a superluminescent diode (SLD) that uses an offset between straight and bent regions in a J-shaped ridge waveguide. The output power is improved several times with respect to similar J-shaped SLDs without the offset. We obtain a high, continuous output power of 31 mW and wide spectral bandwidths up to 90 nm centered at about 1.1 µm.

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Authors and Affiliations

  1. Center for Opto-electronic Conversion Systems, Korea Institute of Science and Technology, Seoul, 136-791, Korea

    Young Chae Yoo & Il Ki Han

  2. Hana Academy, Seoul, 122-200, Korea

    Jee Hyun Kim

Authors
  1. Young Chae Yoo
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  2. Il Ki Han
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  3. Jee Hyun Kim
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Correspondence to Il Ki Han.

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Yoo, Y.C., Han, I.K. & Kim, J.H. High-power InAs quantum-dot superluminescent diodes with offset J-shaped waveguides. Journal of the Korean Physical Society 61, 1325–1327 (2012). https://doi.org/10.3938/jkps.61.1325

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  • DOI: https://doi.org/10.3938/jkps.61.1325

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