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Precursor state of oxygen molecules on the Si(001) surface during the initial room-temperature adsorption

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Abstract

The initial adsorption of oxygen molecules on Si(001) is investigated at room temperature. The scanning tunneling microscopy images reveal a unique bright O2-induced feature. The very initial sticking coefficient of O2 below 0.04 Langmuir is measured to be ∼0.16. Upon thermal annealing at 250–600 °C, the bright O2-induced feature is destroyed, and the Si(001) surface is covered with dark depressions that seem to be oxidized structures with -Si-O-Si- bonds. This suggests that the observed bright O2-induced feature is an intermediate precursor state that may be either a silanone species or a molecular adsorption structure.

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Correspondence to Ja-Yong Koo.

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Hwang, E., Chang, Y.H., Kim, YS. et al. Precursor state of oxygen molecules on the Si(001) surface during the initial room-temperature adsorption. Journal of the Korean Physical Society 61, 1046–1050 (2012). https://doi.org/10.3938/jkps.61.1046

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