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Effect of oxygen content on resistive switching memory characteristics of TiO x films

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Abstract

This work reports a strong oxygen-content dependence of the resistive switching characteristics in TiO x films grown by sputtering Ti under an oxygen ambient at flow rates (F Q ) from 0.4 to 2.0 sccm. Remarkable improvements in the resistive switching parameters of the Al/TiO x /Pt memory devices, including dispersions of set/reset voltages, on/off ratio, and data retention, are obtained at F Q = 1.1 sccm. Based on the results of Rutherford backscattering and X-ray photoelectron spectroscopy, we show that the resistive switching characteristics of Al/TiO x /Pt devices are determined by the stoichiometry of the TiO x films and by the number of mobile oxygen ions in the films.

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Authors and Affiliations

  1. Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin, 446-701, Korea

    Keun Yong Lim, Jae Hee Park, Sung Kim & Suk-Ho Choi

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  1. Keun Yong Lim
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  2. Jae Hee Park
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  3. Sung Kim
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  4. Suk-Ho Choi
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Correspondence to Suk-Ho Choi.

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Lim, K.Y., Park, J.H., Kim, S. et al. Effect of oxygen content on resistive switching memory characteristics of TiO x films. Journal of the Korean Physical Society 60, 791–794 (2012). https://doi.org/10.3938/jkps.60.791

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  • DOI: https://doi.org/10.3938/jkps.60.791

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