Abstract
In this study, we propose a simple method to design binary masks (BIMs) at an extreme ultraviolet (EUV) wavelength for lithography and at a deep ultraviolet (DUV) wavelength for inspection. We study the optimum optical constant (refractive index and extinction coefficient) for low reflectance and categorize SnTe, ZnTe, TaN, and TaBN materials as absorber materials and ITO, Al2O3 as antireflection coating (ARC) materials. Also, we design absorber stacks to satisfy the optical contrast both at EUV and DUV wavelengths. An absorber stack design with an ITO ARC layer and a SnTe absorber layer is found to have a minimum thickness of 30.9 nm. The result will be very helpful in preventing the geometrical shadow effect as compared to the 80-nm absorber stack that is currently used by many semiconductor industries.
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Park, S., Peranantham, P., Kang, H.Y. et al. Design of binary masks for extreme ultraviolet lithography with deep ultraviolet inspection by using a simple method. Journal of the Korean Physical Society 60, 1305–1309 (2012). https://doi.org/10.3938/jkps.60.1305
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DOI: https://doi.org/10.3938/jkps.60.1305