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Schottky contacts to polar and nonpolar n-type GaN

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Abstract

Using the current-voltage measurements, we observed the barrier heights of c-plane GaN in Pt and Au Schottky contacts to be higher than those of a-plane GaN. However, the barrier height of c-plane GaN was lower than that of a-plane GaN in the Ti Schottky contacts. The N/Ga ratio calculated by integrating the X-ray photoelectron spectroscopy (XPS) spectra of Ga 3d and N 1s core levels showed that c-plane GaN induced more Ga vacancies near the interface than a-plane GaN in the Ti Schottky contacts, reducing the effective barrier height through an enhancement of the tunneling probability.

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Authors and Affiliations

  1. College of Humanities and Sciences, Hanbat National University, Daejeon, 305-719, Korea

    Hogyoung Kim

  2. Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120, Halle, Germany

    Soo-Hyon Phark

  3. Korea Advanced Nano Fab Center, Suwon, 443-270, Korea

    Keun-Man Song

  4. Department of Physics, Department of Chemistry and Nano Science, Ewha Womans University, Seoul, 120-720, Korea

    Dong-Wook Kim

Authors
  1. Hogyoung Kim
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  2. Soo-Hyon Phark
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  3. Keun-Man Song
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  4. Dong-Wook Kim
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Correspondence to Hogyoung Kim.

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Kim, H., Phark, SH., Song, KM. et al. Schottky contacts to polar and nonpolar n-type GaN. Journal of the Korean Physical Society 60, 104–107 (2012). https://doi.org/10.3938/jkps.60.104

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  • DOI: https://doi.org/10.3938/jkps.60.104

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