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Twin-free Epitaxial LaFeO3 Films Grown on Orthorhombic GdScO3(110)o Substrates

Abstract

Epitaxial LaFeO3 (LFO) thin films have been grown on orthorhombic GdScO3 (GSO) substrate by using the pulsed laser deposition (PLD) method. Surface morphology of the LFO film exhibits atomically controlled surface characteristics with steps and terraces. The structural information is investigated comprehensively through the X-ray diffraction (XRD) analysis. The orthorhombicity of the GSO substrate suppresses twin formation resulting in twin-free LFO films. The untwinned LFO films are fully strained in a monoclinic structure up to 100 nm thickness. As the film thickness further increases, the strain is abruptly relaxed above 100 nm without considerable twinning and the monoclinic distortion becomes minimal as like the orthorhombic bulk LFO.

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Acknowledgments

This work was supported by the Max Planck POSTECH/Korea Research Initiative, Study for Nano Scale Optomaterials and Complex Phase Materials (2016K1A4A4A01922028) through National Research Foundation (NRF) funded by MSIP of Korea. J. H. Song was also supported by the NRF of Korea (Grant No. 2016R1A2B4008706 and 2019057155).

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Correspondence to Jae-Hoon Park.

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Park, J., Kim, Y., Lee, D. et al. Twin-free Epitaxial LaFeO3 Films Grown on Orthorhombic GdScO3(110)o Substrates. J. Korean Phys. Soc. 76, 273–276 (2020). https://doi.org/10.3938/jkps.76.273

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Keywords

  • LaFeO3
  • Thin film
  • Pulsed laser deposition