Advertisement

Journal of the Korean Physical Society

, Volume 76, Issue 1, pp 27–33 | Cite as

A Study on Computational Fluid Dynamic Simulations to Improve the Thickness Uniformity of Porous Metal Films Deposited by Using Cluster Sputtering

  • Jun Hyeong Kim
  • Se Yong Park
  • Hee Chul LeeEmail author
  • Sung Ho Yun
  • Ho Nyun Lee
Article
  • 2 Downloads

Abstract

We conducted computational fluid dynamic (CFD) simulations to improve the thickness uniformity of cluster-sputtered porous metal films. The cluster sputtering equipment was divided into a module where the sputtered metal atoms condensed and cluster nanoparticles formed and a chamber where porous metal films were deposited. To optimize the equipment geometry, we performed simulations and deposition experiments for various planar nozzle positions and nozzle-to-substrate distances in the module. The simulated gas velocity distribution 25 mm above the substrate exhibited a similar tendency to the thickness distribution of the deposited porous Cu films. When a 4-mm nozzle was located 40 and 240 mm from the module center and substrate, respectively, the simulated gas velocity distribution exhibited uniformity to within 8.4% for the substrate with a 70-mm radius. The thickness uniformity and the deposition rate of the deposited porous Cu films were 9.3% and 2 µm/min, respectively, using equipment with the same geometry.

Keywords

CFD Porous metal films Cluster sputtering Thickness uniformity 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Notes

Acknowledgments

This work was supported by the Industrial Technology Innovation Program (No. 10077465) funded by the Ministry of Trade, Industry, and Energy (MOTIE) and by the Priority Research Center Program (NRF-2017 R1A6A1A03015562) funded by the Ministry of Education (MOE) of the Republic of Korea.

References

  1. [1]
    F. Jia, C. Yu, K. Deng and L. Zhang, J. Phys. Chem. C 111, 8424 (2007).CrossRefGoogle Scholar
  2. [2]
    Y. Jiao et al., Nanotechnology 22, 295 (2011).CrossRefGoogle Scholar
  3. [3]
    X. Y. Lang et al., Appl. Phys. Lett. 94, 213109 (2009).ADSCrossRefGoogle Scholar
  4. [4]
    H. T. Tran, J. Y. Byun and S. H. Kim, J. Alloys Compd. 764, 371 (2018).CrossRefGoogle Scholar
  5. [5]
    L. Zhang et al., ACS Nano 7, 4595 (2013).CrossRefGoogle Scholar
  6. [6]
    S. Park, T. D. Chung and H. C. Kim, Anal. Chem. 75, 3046 (2003).CrossRefGoogle Scholar
  7. [7]
    X. Y. Lang, H. T. Yuan, Y. Iwasa and M. W. Chen, Scr. Mater. 64, 923 (2011).CrossRefGoogle Scholar
  8. [8]
    H. Y. Jung et al., Adv. Energy Mater. 1, 1126 (2011).CrossRefGoogle Scholar
  9. [9]
    Z. Zhang et al., J. Phys. Chem. C 113, 12629 (2009).CrossRefGoogle Scholar
  10. [10]
    G. H. Lee et al., Thin Solid Films 631, 147 (2017).ADSCrossRefGoogle Scholar
  11. [11]
    P. Jiang, J. Cizeron, J. F. Bertone and V. L. Colvin, J. Am. Chem. Soc. 121, 7957 (1999).CrossRefGoogle Scholar
  12. [12]
    E. Metwalli et al., Langmuir 25, 11815 (2009).CrossRefGoogle Scholar
  13. [13]
    J. Patel et al., Anal. Chem. 85, 11610 (2013).CrossRefGoogle Scholar
  14. [14]
    B. Zhao and M. M. Collinson, J. Electroanal. Chem. 684, 53 (2012).CrossRefGoogle Scholar
  15. [15]
    Y. Lu, Q. Wang, J. Sun and J. Shen, Langmuir 21, 5179 (2005).CrossRefGoogle Scholar
  16. [16]
    D. Van Noort and C. F. Mandenius, Biosens. Bioelectron. 15, 203 (2000).CrossRefGoogle Scholar
  17. [17]
    J. Jia, L. Cao and Z. Wang, Langmuir 24, 5932 (2008).CrossRefGoogle Scholar
  18. [18]
    A. F. Jankowski and J. P. Hayes, J. Vac. Sci. Technol. A 21, 422 (2003).ADSCrossRefGoogle Scholar
  19. [19]
    U. H. Kwon, S. H. Choi, Y. H. Park and W. J. Lee, Thin Solid Films 475, 17 (2005).ADSCrossRefGoogle Scholar

Copyright information

© The Korean Physical Society 2020

Authors and Affiliations

  • Jun Hyeong Kim
    • 1
  • Se Yong Park
    • 1
  • Hee Chul Lee
    • 1
    Email author
  • Sung Ho Yun
    • 2
  • Ho Nyun Lee
    • 3
  1. 1.Department of Advanced Materials EngineeringKorea Polytechnic UniversitySiheungKorea
  2. 2.Corporate Research InstituteKwang Lim Precision Ltd.DaeguKorea
  3. 3.Surface Technology R&D GroupKorea Institute of Industrial TechnologyIncheonKorea

Personalised recommendations