Monolayer (ML) molybdenum disulfide (MoS2) is a promising material for next-generation optoelectronic applications because MoS2 exhibits remarkable electronic and optical properties owing to its flexibility and direct bandgap. Despite these outstanding properties, MoS2 has limitations in fabricating optoelectronic devices because of its low quantum yield. To overcome these limitations, we propose a photoluminescence (PL) enhancement technique using a surface plasmon effect induced by transferring ML MoS2 onto Ag nanowires (NWs). We observed the surface-enhanced PL signals from ML MoS2 on Ag NWs and investigated the effect of the diameter of the latter. Furthermore, we explored the origin of efficient PL enhancement using Ag NWs through theoretical simulations. Our experimental and theoretical studies are useful for the application of ML transition-metal dichalcogenides in flexible nano-optoelectronics.
This work was supported by the Agency for Defense Development through a Chemical and Biological Research Center and a National Research Foundation of Korea (NRF) grant funded by the Korean Government (MSIP) (2019R1A2B5B02070657). The authors gratefully acknowledge Sehwan Park for MoS2 preparation.