Journal of the Korean Physical Society

, Volume 74, Issue 2, pp 168–172 | Cite as

Effect of Isovalent Doping on the Magnetic Properties of ZnMnO Diluted Magnetic Semiconductors

  • Ziyodbek A. Yunusov
  • Shavkat U. YuldashevEmail author
  • Tae Won Kang
  • Seung Joo Lee
  • Young Hae Kwon
  • Hee Chang Jeon


The magnetic properties of a ZnMnO diluted magnetic semiconductor isovalently doped with Mg and S have been successfully studied. ZnMnO alloys were prepared with different concentrations of magnesium and sulfur by using ultrasonic spray pyrolysis technique; additionally, the films were doped for free charge carriers by using nitrogen. For ZnMnO doped with 5% of Mg, the Curie temperature reached 104 K, and second-phase magnetic precipitates were observed with increasing Mg concentration. On the other hand, the sulfur doped ZnMnO showed an increased Curie temperature higher than room temperature due to increased number of holes which mediated the magnetic exchange interaction between magnetic ions.


Diluted magnetic semiconductors ZnMnO Isovalent doping 


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  1. [1]
    T. Dietl and H. Ohno, Rev. Mod. Phys. 86, 187 (2014).ADSCrossRefGoogle Scholar
  2. [2]
    H. Irie, S. Miura, K. Kamiya and K. Hasimoto, Chem. Phys. Lett. 457, 202 (2008).ADSCrossRefGoogle Scholar
  3. [3]
    T. Fukumura, Z. Jin, M. Kawasaki, T. Shono, T. Hasegawa, S. Koshihara and H. Koinuma, Appl. Phys. Lett. 78, 958 (2001).ADSCrossRefGoogle Scholar
  4. [4]
    D. S. Kim, S. J. Lee, C. K. Min, H. M. Kim, Sh. U. Yuldashev, T. W. Kang, D. Y. Kim and T. W. Kim, Jpn. J. Appl. Phys. 42, 7217 (2003).ADSCrossRefGoogle Scholar
  5. [5]
    H. C. Hsu, C. Y. Wu, H. M. Cheng and W. F. Hsieh, Appl. Phys. Lett. 89, 013101 (2006).ADSCrossRefGoogle Scholar
  6. [6]
    R. R. Thankalekshmi and A. C. Rastogi, J. Appl. Phys. 112, 063708 (2012).ADSCrossRefGoogle Scholar
  7. [7]
    G. D. Nipan, V. A. Ketsko, A. I. Stognij, A. V. Trukhanov, T. N. Kol’tsova, M. A. Kop’eva, L. V. Elesina and T. N. Kuznetsov, Inorganic Mater. 46, 429 (2010).CrossRefGoogle Scholar
  8. [8]
    G. D. Nipan, V. A. Ketsko, A. I. Stognij, T. N. Kol’tsova, E. N. Beresnev, M. A. Kop’eva, L. V. Elesina, T. N. Kuznetsov and A. V. Trukhanov, Doklady Phys. Chem. 430, 39 (2010).CrossRefGoogle Scholar
  9. [9]
    G. D. Nipan, V. A. Ketsko, T. N. Kol’tsova, M. A. Kop’eva, A. I. Stognij and A. V. Trukhanov, Inorganic Mater. 46, 1019 (2010).CrossRefGoogle Scholar
  10. [10]
    O. Madelung, Semiconductor Basic Data (Springer-Verlag, Berlin, 1996).CrossRefGoogle Scholar
  11. [11]
    Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho and H. Morkoç, J. Appl. Phys. 98, 041301 (2005).ADSCrossRefGoogle Scholar
  12. [12]
    Y. H. Shin and Y. Kim, J. Korean Phys. Soc. 61, 598 (2012).MathSciNetGoogle Scholar
  13. [13]
    J. Tauc, Mater. Res. Bull. 3, 37 (1968).CrossRefGoogle Scholar
  14. [14]
    C. Persson, C. Platzer-Björkman, J. Malmström, T. Törndahl and M. Edoff, Phys. Rev. Lett. 97, 146403 (2006).ADSCrossRefGoogle Scholar
  15. [15]
    Sh. U. Yuldashev, Kh. T. Igamberdiev, Y. H. Kwon, S. Lee, X. Liu, J. K. Furdyna and A. G. Shashkov and T. W. Kang, Phys. Rev. B 85, 125202 (2012).ADSCrossRefGoogle Scholar

Copyright information

© The Korean Physical Society 2019

Authors and Affiliations

  • Ziyodbek A. Yunusov
    • 1
  • Shavkat U. Yuldashev
    • 1
    Email author
  • Tae Won Kang
    • 1
  • Seung Joo Lee
    • 2
  • Young Hae Kwon
    • 2
  • Hee Chang Jeon
    • 2
  1. 1.Nano-Information Technology Academy (NITA)Dongguk UniversitySeoulKorea
  2. 2.Quantum-Functional Semiconductor Research CenterDongguk UniversitySeoulKorea

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