Journal of the Korean Physical Society

, Volume 74, Issue 2, pp 140–144 | Cite as

Optical Characterization of Luminescent Silicon Nanowires

  • Daeyoon Jung
  • Honglae SohnEmail author
  • Yongmin Kim


Visible photoluminescence (PL) at room temperature from silicon nanowires (Si NWs) prepared by using the metal-assisted chemical-etching (MACE) technique is reported. The morphology and the luminescence properties of Si NWs are characterized by using scanning electron microscopy (SEM), high resolution transmission electron microscopy (HR-TEM), and luminescence spectroscopy. TEM images of the luminescent Si NWs reveal that the surfaces of the Si NWs are very rough, with a few nano-sized silicon particles being attached to the Si NWs. Luminescent Si NWs are optically characterized by PL and Raman measurements. Temperature-dependent PL measurements are measured at temperatures from 5 K to room temperature to determine the origin of the PL. The PL intensity decreases and the wavelength of the PL is blue-shifted as the temperature is increased. The Raman spectra of luminescent Si NWs reveal quantum confinement of the Si NWs.


Silicon nanowire Raman spectroscopy Temperature-dependent photoluminescence 


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Copyright information

© The Korean Physical Society 2019

Authors and Affiliations

  1. 1.Department of ChemistryChosun UniversityGwangjuKorea
  2. 2.Department of Applied Physics and Institute of Nanosensors and BiotechnologyDankook UniversityYonginKorea

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