Optical Characterization of Luminescent Silicon Nanowires
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Visible photoluminescence (PL) at room temperature from silicon nanowires (Si NWs) prepared by using the metal-assisted chemical-etching (MACE) technique is reported. The morphology and the luminescence properties of Si NWs are characterized by using scanning electron microscopy (SEM), high resolution transmission electron microscopy (HR-TEM), and luminescence spectroscopy. TEM images of the luminescent Si NWs reveal that the surfaces of the Si NWs are very rough, with a few nano-sized silicon particles being attached to the Si NWs. Luminescent Si NWs are optically characterized by PL and Raman measurements. Temperature-dependent PL measurements are measured at temperatures from 5 K to room temperature to determine the origin of the PL. The PL intensity decreases and the wavelength of the PL is blue-shifted as the temperature is increased. The Raman spectra of luminescent Si NWs reveal quantum confinement of the Si NWs.
KeywordsSilicon nanowire Raman spectroscopy Temperature-dependent photoluminescence
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