Growth of AlN Epilayers on Sapphire Substrates by Using the Mixed-Source Hydride Vapor Phase Epitaxy Method
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AIN epilayers of different thicknesses were grown directly on sapphire substrates without a buffer layer by using a mixed (Al+Ga) source containing 95 at% Al and a mixed-source hydride vapor phase epitaxy (HVPE) method at a temperature of around 1120°C. The grown epilayers consisted of an AlN alloy in the upper region and an AlGaN alloy in the nucleation region just above the sapphire substrate. The upper part of the epilayer gradually transformed from AlGaN into AlN owing to a decrease in the Ga content of the AlGaN alloy grown on the sapphire substrate with increasing growth thickness. The role of Ga in the mixed (Al+Ga) source in the growth of the epilayer directly on the sapphire substrate and the dependence of the growth mechanism of the epilayer with varying Ga contents on the growth thickness were investigated. We found that Ga in the mixed (Al+Ga) source only acted as an activation material that generated gaseous precursors rather than directly contributing to the growth of the epilayers. The mixed-source HVPE method appears suitable for the growth of thick AIN epilayers.
KeywordsAlN AlGaN Mixed-source HVPE Epitaxy Wide-bandgap semiconductor
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This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2017R1D1A3B03035999).
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