Journal of the Korean Physical Society

, Volume 74, Issue 2, pp 116–121 | Cite as

Photoelectrochemical Characterization of p-type InAlP on GaAs for Solar Water Splitting Application

  • Mostafa Afifi Hassan
  • Jin-Ho Kang
  • Santosh S. Patil
  • Muhammad Ali Johar
  • Sang-Wan RyuEmail author
  • Suk-In Park
  • Jindong Song


The photoelectrochemical characteristics of p-InAlP grown on GaAs were investigated to exploit the potential of that material future as a photocathode in solar water splitting. The flat band potential was measured, and electrochemical impedance spectroscopy was performed to propose an equivalent circuit model and circuit elements fitted for charge transport analysis. Low photocatalytic activity was attributed to the band alignment with the water redox level. Since the valence band of InAlP is close to the water oxidation level, it causes inefficient hole transport to the counter electrode and the accumulation of holes in the photocathode.


InAlP Photocathode Photoelectrochemical Water splitting 


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Copyright information

© The Korean Physical Society 2019

Authors and Affiliations

  • Mostafa Afifi Hassan
    • 1
  • Jin-Ho Kang
    • 1
  • Santosh S. Patil
    • 1
  • Muhammad Ali Johar
    • 1
  • Sang-Wan Ryu
    • 1
    Email author
  • Suk-In Park
    • 2
  • Jindong Song
    • 2
  1. 1.Department of PhysicsChonnam National UniversityGwangjuKorea
  2. 2.Center for Optoelectronic Materials and DevicesKorea Institute of Science and TechnologySeoulKorea

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